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The scalability of quantum networks based on solid-state spin qubits is hampered by the short range of natural spin-spin interactions. Here, we propose a scheme to entangle distant spin qubits via the soft modes of an antiferromagnetic domain wall (DW). As spin qubits, we focus on quantum impurities (QIs) placed in the vicinity of an insulating antiferromagnetic thin film. The low-energy modes harbored by the DW are embedded in the antiferromagnetic bulk, whose intrinsic spin-wave dynamics have a gap that can exceed the THz range. By setting the QI frequency and the temperature well within the bulk gap, we focus on the dipolar interaction between the QI and two soft modes localized at the DW. One is a string-like mode associated with transverse displacements of the DW position, while the dynamics of the other, corresponding to planar rotations of the Neel order parameter, constitute a spin superfluid. By choosing the geometry in which the QI does not couple to the string mode, we use an external magnetic field to control the gap of the spin superfluid and the qubit-qubit coupling it engenders. We suggest that a tunable micron-range coherent coupling between qubits can be established using common antiferromagnetic materials.
We investigate a hybrid quantum system consisting of spatially separated resonant exchange qubits, defined in three-electron semiconductor triple quantum dots, that are coupled via a superconducting transmission line resonator. Drawing on methods fro
It is well established that the spin-orbit interaction in heavy metal/ferromagnet heterostructures leads to a significant interfacial Dzyaloshinskii-Moriya Interaction (DMI) that modifies the internal structure of magnetic domain walls (DWs) to favor
We propose a time-delay oscillator with Mackey-Glass nonlinearity based on a pinned magnetic domain wall in a thin film nanostrip. Through spin transfer torques, electric currents applied along the strip cause the domain wall to deform and displace a
We present a theory of the current-voltage characteristics of a magnetic domain wall between two highly spin-polarized materials, which takes into account the effect of the electrical bias on the spin-flip probability of an electron crossing the wall
A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as functions of