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تسجيل مستخدم جديدRecent advances in spin-orbit torques: Moving towards device applications
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The ability of spintronic devices to utilize an electric current for manipulating the magnetization has resulted in large-scale developments, such as, magnetic random access memories and boosted the spintronic research area. In this regard, over the last decade, magnetization manipulation using spin-orbit torque has been devoted a lot of research attention as it shows a great promise for future ultrafast and power efficient magnetic memories. In this review, we summarize the latest advancements in spin-orbit torque research and highlight some of the technical challenges for practical spin-orbit torque devices. We will first introduce the basic concepts and highlight the latest material choices for spin-orbit torque devices. Then, we will summarize the important advancements in the study of magnetization switching dynamics using spin-orbit torque, which are important from scientific as well as technological aspect. The final major section focuses on the concept of external assist field free spin-orbit torque switching which is a requirement for practical spin-orbit torque devices.
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Spin-orbit torques offer a promising mechanism for electrically controlling magnetization dynamics in nanoscale heterostructures. While spin-orbit torques occur predominately at interfaces, the physical mechanisms underlying these torques can origina
te in both the bulk layers and at interfaces. Classifying spin-orbit torques based on the region that they originate in provides clues as to how to optimize the effect. While most bulk spin-orbit torque contributions are well studied, many of the interfacial contributions allowed by symmetry have yet to be fully explored theoretically and experimentally. To facilitate progress, we review interfacial spin-orbit torques from a semiclassical viewpoint and relate these contributions to recent experimental results. Within the same model, we show the relationship between different interface transport parameters. For charges and spins flowing perpendicular to the interface, interfacial spin-orbit coupling both modifies the mixing conductance of magnetoelectronic circuit theory and gives rise to spin memory loss. For in-plane electric fields, interfacial spin-orbit coupling gives rise to torques described by spin-orbit filtering, spin swapping and precession. In addition, these same interfacial processes generate spin currents that flow into the non-magnetic layer. For in-plane electric fields in trilayer structures, the spin currents generated at the interface between one ferromagnetic layer and the non-magnetic spacer layer can propagate through the non-magnetic layer to produce novel torques on the other ferromagnetic layer.
Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. Mor
e recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.
Spin torque from spin current applied to a nanoscale region of a ferromagnet can act as negative magnetic damping and thereby excite self-oscillations of its magnetization. In contrast, spin torque uniformly applied to the magnetization of an extende
d ferromagnetic film does not generate self-oscillatory magnetic dynamics but leads to reduction of the saturation magnetization. Here we report studies of the effect of spin torque on a system of intermediate dimensionality - a ferromagnetic nanowire. We observe coherent self-oscillations of magnetization in a ferromagnetic nanowire serving as the active region of a spin torque oscillator driven by spin orbit torques. Our work demonstrates that magnetization self-oscillations can be excited in a one-dimensional magnetic system and that dimensions of the active region of spin torque oscillators can be extended beyond the nanometer length scale.
Spin-orbit interaction (SOI) couples charge and spin transport, enabling electrical control of magnetization. A quintessential example of SOI-induced transport is the anomalous Hall effect (AHE), first observed in 1880, in which an electric current p
erpendicular to the magnetization in a magnetic film generates charge accumulation on the surfaces. Here we report the observation of a counterpart of the AHE that we term the anomalous spin-orbit torque (ASOT), wherein an electric current parallel to the magnetization generates opposite spin-orbit torques on the surfaces of the magnetic film. We interpret the ASOT as due to a spin-Hall-like current generated with an efficiency of 0.053+/-0.003 in Ni80Fe20, comparable to the spin Hall angle of Pt. Similar effects are also observed in other common ferromagnetic metals, including Co, Ni, and Fe. First principles calculations corroborate the order of magnitude of the measured values. This work suggests that a strong spin current with spin polarization transverse to magnetization can exist in a ferromagnet, despite spin dephasing. It challenges the current understanding of spin-orbit torque in magnetic/nonmagnetic bilayers, in which the charge-spin conversion in the magnetic layer has been largely neglected.
We study the optically induced torques in thin film ferromagnetic layers under excitation by circularly polarized light. We study cases both with and without Rashba spin-orbit coupling using a 4-band model. In the absence of Rashba spin-orbit couplin
g, we derive an analytic expression for the optical torques, revealing the conditions under which the torque is mostly derived from optical spin transfer torque (i.e. when the torque is along the direction of optical angular momentum), versus when the torque is derived from the inverse Faraday effect (i.e. when the torque is perpendicular to the optical angular momentum). We find the optical spin transfer torque dominates provided that the excitation energy is far away from band edge transitions, and the magnetic exchange splitting is much greater than the lifetime broadening. For the case with large Rashba spin-orbit coupling and out-of-plane magnetization, we find the torque is generally perpendicular to the photon angular momentum and is ascribed to an optical Edelstein effect.
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