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Spin textures such as skyrmions and magnetic vortices are good candidates for a variety of applications, such as magnetic memories, oscillators and neuromorphic computing. Understanding the magnetic process of these systems is important, as it determines the systems response in field and frequency. In this work, we investigated the magnetization process of single microdisks by measuring their magnetotransport properties as a function of temperature. The strong dependence of resistance on the disks magnetic state helped us understand the magnetization configurations of a single microdisk for different temperatures and fields. We determined the thermal barriers for the nucleation and annihilation processes by fitting the nucleation and annihilation fields to an exponential model. Moreover, we observed and characterized the domain wall depinning effect for temperatures below 100 K. This effect prevents the formation of a magnetic vortex during the nucleation process.
Graphene on hexagonal boron-nitride (h-BN) is an atomically flat conducting system that is ideally suited for probing the effect of Zeeman splitting on electron transport. We demonstrate by magneto-transport measurements that a parallel magnetic fiel
We have studied Josephson tunneling through a circularly polarized micron or submicron-size disk of a soft ferromagnetic material. Such a disk contains a vortex that exhibits rich classical dynamics and has recently been proposed as a tool to study q
Classical transport properties of an electron, moving in plain, in an array of magnetic antidot has been calculated. The homogeneous magnetic field in z-direction fills the whole space except of cylinders of radius r_0. The magnetoresistance shows ad
We report on the switching of the magnetic vortex core in a Pac-man disk using a magnetic field pulse, investigated via micromagnetic simulations. The minimum core switching field is reduced by 72 % compared to that of a circular disk with the same d
We report on combined measurements of heat and charge transport through a single-electron transistor. The device acts as a heat switch actuated by the voltage applied on the gate. The Wiedemann-Franz law for the ratio of heat and charge conductances