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تسجيل مستخدم جديدUltrafast Carrier Dynamics in VO$_2$ across the Pressure-Induced Insulator-to-Metal Transition
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Johannes M. Braun
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We utilize near-infrared pump and mid-infrared probe spectroscopy to investigate the ultrafast electronic response of pressurized VO$_2$. Distinct pump-probe signals and a pumping threshold behavior are observed even in the pressure-induced metallic state showing a noticeable amount of localized electronic states. Our results are consistent with a scenario of a bandwidth-controlled Mott-Hubbard transition.
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