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It is shown theoretically that the renormalization of the electron energy spectrum of bilayer graphene with a strong high-frequency electromagnetic field (dressing field) results in the Lifshitz transition - the abrupt change in the topology of the Fermi surface near the band edge. This effect substantially depends on the polarization of the field: The linearly polarized dressing field induces the Lifshitz transition from the quadruply-connected Fermi surface to the doubly-connected one, whereas the circularly polarized field induces the multicritical point, where the four different Fermi topologies may coexist. As a consequence, the discussed phenomenon creates physical basis to control the electronic properties of bilayer graphene with light.
Resolving low-energy features in the density of states (DOS) holds the key to understanding wide variety of rich novel phenomena in graphene based 2D heterostructures. Lifshitz transition in bilayer graphene (BLG) arising from trigonal warping has be
We derive the renormalization group equations describing all the short-range interactions in bilayer graphene allowed by symmetry and the long range Coulomb interaction. For certain range of parameters, we predict the first order phase transition to
We investigate the intraband nonlinear dynamics in doped bilayer graphene in the presence of strong, linearly-polarized, in-plane terahertz fields. We perform degenerate pump-probe experiments with 3.4 THz fields on doped bilayer graphene at low temp
In the phenomenon of electromagnetically induced transparency1 (EIT) of a three-level atomic system, the linear susceptibility at the dipole-allowed transition is canceled through destructive interference of the direct transition and an indirect tran
We theoretically calculate the impurity-scattering induced resistivity of twisted bilayer graphene at low twist angles where the graphene Fermi velocity is strongly suppressed. We consider, as a function of carrier density, twist angle, and temperatu