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تسجيل مستخدم جديدAn efficient and reliable growth method for epitaxial complex oxide films by molecular beam epitaxy
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Transition metal oxide heterostructures and interfaces host a variety of exciting quantum phases and can be grown with atomic-scale precision by utilising the intensity oscillations of $in$ $situ$ reflection high-energy electron diffraction (RHEED). However, establishing a stable oscillation pattern in the growth calibration of complex oxides films is very challenging and time consuming. Here, we develop a substantially more efficient and reliable growth calibration method for complex oxide films using molecular beam epitaxy.
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Two-dimensional crystals are an important class of materials for novel physics, chemistry, and engineering. Germanane (GeH), the germanium-based analogue of graphane (CH), is of particular interest due to its direct band gap and spin-orbit coupling.
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