ﻻ يوجد ملخص باللغة العربية
The study of electron transport and scattering processes limiting electron mobility in high-quality semiconductor structures is central to solid-state electronics. Here, we uncover an unavoidable source of electron scattering which is caused by fluctuations of nuclear spins. We calculate the momentum relaxation time of electrons in quantum wells governed by the hyperfine interaction between electrons and nuclei and show that this time drastically depends on the spatial correlation of nuclear spins. Moreover, the scattering processes accompanied by a spin flip are a source of the backscattering of Dirac fermions at conducting surfaces of topological insulators.
We study the depolarization of optically oriented electrons in quantum wells subjected to an in-plane magnetic field and show that the Hanle curve drastically depends on the carrier mobility. In low-mobility structures, the Hanle curve is described b
We consider theoretically ${}^{13}$C-hyperfine interaction induced dephasing in carbon nanotubes double quantum dots with curvature induced spin-orbit coupling. For two electrons initially occupying a single dot, we calculate the average return proba
We designed and performed low temperature DC transport characterization studies on two-dimensional electron gases confined in lattice-matched In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells grown by molecular beam epitaxy on InP subst
High surface-mobility, which is attributable to topological protection, is a trademark of three-dimensional topological insulators (3DTIs). Exploiting surface-mobility indicates successful application of topological properties for practical purposes.
As one of paradigmatic phenomena in condensed matter physics, the quantum anomalous Hall effect (QAHE) in stoichiometric Chern insulators has drawn great interest for years. By using model Hamiltonian analysis and first-principle calculations, we est