اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدResonant Visible Light Modulation with Graphene
128
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Fast modulation and switching of light at visible and near-infrared (vis-NIR) frequencies is of utmost importance for optical signal processing and sensing technologies. No fundamental limit appears to prevent us from designing wavelength-sized devices capable of controlling the light phase and intensity at gigaherts (and even terahertz) speeds in those spectral ranges. However, this problem remains largely unsolved, despite recent advances in the use of quantum wells and phase-change materials for that purpose. Here, we explore an alternative solution based upon the remarkable electro-optical properties of graphene. In particular, we predict unity-order changes in the transmission and absorption of vis-NIR light produced upon electrical doping of graphene sheets coupled to realistically engineered optical cavities. The light intensity is enhanced at the graphene plane, and so is its absorption, which can be switched and modulated via Pauli blocking through varying the level of doping. Specifically, we explore dielectric planar cavities operating under either tunneling or Fabry-Perot resonant transmission conditions, as well as Mie modes in silicon nanospheres and lattice resonances in metal particle arrays. Our simulations reveal absolute variations in transmission exceeding 90% as well as an extinction ratio >15 dB with small insertion losses using feasible material parameters, thus supporting the application of graphene in fast electro-optics at vis-NIR frequencies.
قيم البحث
اقرأ أيضاً
Microfabrication of graphene devices used in many experimental studies currently relies on the fact that graphene crystallites can be visualized using optical microscopy if prepared on top of silicon wafers with a certain thickness of silicon dioxide
. We study graphenes visibility and show that it depends strongly on both thickness of silicon dioxide and light wavelength. We have found that by using monochromatic illumination, graphene can be isolated for any silicon dioxide thickness, albeit 300 nm (the current standard) and, especially, approx. 100 nm are most suitable for its visual detection. By using a Fresnel-law-based model, we quantitatively describe the experimental data without any fitting parameters.
Combining the quantum optical properties of single-photon emitters with the strong near-field interactions available in nanophotonic and plasmonic systems is a powerful way of creating quantum manipulation and metrological functionalities. The abilit
y to actively and dynamically modulate emitter-environment interactions is of particular interest in this regard. While thermal, mechanical and optical modulation have been demonstrated, electrical modulation has remained an outstanding challenge. Here we realize fast, all-electrical modulation of the near-field interactions between a nanolayer of erbium emitters and graphene, by in-situ tuning the Fermi energy of graphene. We demonstrate strong interactions with a >1,000-fold increased decay rate for 25% of the emitters, and electrically modulate these interactions with frequencies up to 300 kHz - orders of magnitude faster than the emitters radiative decay (100 Hz). This constitutes an enabling platform for integrated quantum technologies, opening routes to quantum entanglement generation by collective plasmon emission or photon emission with controlled waveform.
Sensing response of individual single-crystal titania nanowires configured as chemiresistors for detecting reducing (CO, H2) and oxidizing (O2) gases is shown to be sensitive to visible light illumination. It is assumed that doping of the TiO2 nanowi
res with C and/or N during carbon assisted vapor-solid growth creates extrinsic states in the band gap close to the valence band maximum, which enables photoactivity at the photon energies of visible light. The inherently large surface-to-volume ratio of nanowires, along with facile transport of the photo-generated carriers to/from the nanowires surface promote the adsorption/desorption of donor/acceptor molecules, and therefore open the possibility for visible light assisted gas sensing. The photo-catalytic performance of TiO2 nanowire chemiresistors demonstrates the prospect of combining light harvesting and sensing action in a single nanostructure.
Based on the quantum master equation approach, the nonlinear electric conductivity of graphene is investigated under static electric fields for various chemical potential shifts. The simulation results show that, as the field strength increases, the
effective conductivity is firstly suppressed, reflecting the depletion of effective carriers due to the large displacement in the Brillouin zone caused by the strong field. Then, as the field strength exceeds $1$~MV/m, the effective conductivity increases, overcoming the carrier depletion via the Landau--Zener tunneling process. Based on the nonlinear behavior of the conductivity, the charge transport induced by few-cycle THz pulses is further studied to elucidate the ultrafast optical control of electric current in matter.
We employ a quantum Liouville equation with relaxation to model the recently observed anomalous Hall effect in graphene irradiated by an ultrafast pulse of circularly polarized light. In the weak-field regime, we demonstrate that the Hall effect orig
inates from an asymmetric population of photocarriers in the Dirac bands. By contrast, in the strong-field regime, the system is driven into a non-equilibrium steady state that is well-described by topologically non-trivial Floquet-Bloch bands. Here, the anomalous Hall current originates from the combination of a population imbalance in these dressed bands together with a smaller anomalous velocity contribution arising from their Berry curvature. This robust and general finding enables the simulation of electrical transport from light-induced Floquet-Bloch bands in an experimentally relevant parameter regime and creates a pathway to designing ultrafast quantum devices with Floquet-engineered transport properties.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
