اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدEfficient and realistic device modeling from atomic detail to the nanoscale
99
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
As semiconductor devices scale to new dimensions, the materials and designs become more dependent on atomic details. NEMO5 is a nanoelectronics modeling package designed for comprehending the critical multi-scale, multi-physics phenomena through efficient computational approaches and quantitatively modeling new generations of nanoelectronic devices as well as predicting novel device architectures and phenomena. This article seeks to provide updates on the current status of the tool and new functionality, including advances in quantum transport simulations and with materials such as metals, topological insulators, and piezoelectrics.
قيم البحث
اقرأ أيضاً
Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to the nanomete
r sizes. Here we study the switching characteristics of nanoscale junctions created between a tungsten tip and a silver film covered by a thin ionic conductor layer. Atomic-sized junctions show spectacular current induced switching characteristics, but both the magnitude of the switching voltage and the direction of the switching vary randomly for different junctions. In contrast, for somewhat larger junctions with diameters of a few nanometers a well defined, reproducible switching behavior is observed which is associated with the formation and destruction of nanoscale channels in the ionic conductor surface layer. Our results define a low size limit of 3 nm for reliable ionic nano-switches, which is well below the resolution of recent lithographic techniques.
We aim to provide engineers with an introduction to the non-equilibrium Greens function (NEGF) approach, which provides a powerful conceptual tool and a practical analysis method to treat small electronic devices quantum mechanically and atomisticall
y. We first review the basis for the traditional, semiclassical description of carriers that has served device engineers for more than 50 years. We then describe why this traditional approach loses validity at the nanoscale. Next, we describe semiclassical ballistic transport and the Landauer-Buttiker approach to phase coherent quantum transport. Realistic devices include interactions that break quantum mechanical phase and also cause energy relaxation. As a result, transport in nanodevices are between diffusive and phase coherent. We introduce the non equilbrium Greens function (NEGF) approach, which can be used to model devices all the way from ballistic to diffusive limits. This is followed by a summary of equations that are used to model a large class of layered structures such as nanotransistors, carbon nanotubes and nanowires. An application of the NEGF method in the ballistic and scattering limits to silicon nanotransistors is discussed.
The coupling of the spin and the motion of charge carriers stems directly from the atomic structure of a conductor. It has become an important ingredient for the emergence of topological matter, and, in particular, topological superconductivity which
could host non-abelian excitations such as Majorana modes or parafermions. These modes are sought after mostly in semiconducting platforms which are made of heavy atoms and therefore exhibit naturally a large spin-orbit interaction. Creating domain walls in the spin orbit interaction at the nanoscale may turn out to be a crucial resource for engineering topological excitations suitable for universal topological quantum computing. For example, it has been proposed for exploring exotic electronic states or for creating hinge states. Realizing this in natural platforms remains a challenge. In this work, we show how this can be alternatively implemented by using a synthetic spin orbit interaction induced by two lithographically patterned magnetically textured gates. By using a double quantum dot in a light material -- a carbon nanotube -- embedded in a microwave cavity, we trigger hopping between two adjacent orbitals with the microwave photons and directly compare the wave functions separated by the domain wall via the light-matter coupling. We show that we can achieve an engineered staggered spin-orbit interaction with a change of strength larger than the hopping energy between the two sites.
Topological band insulators and (semi-) metals can arise out of atomic insulators when the hopping strength between electrons increases. Such topological phases are separated from the atomic insulator by a bulk gap closing. In this work, we show that
in many (magnetic) space groups, the crystals with certain Wyckoff positions and orbitals being occupied must be semimetal or metals in the atomic limit, e.g. the hopping strength between electrons is infinite weak but not vanishing, which then are termed atomic (semi-)metals (ASMs). We derive a sufficient condition for realizing ASMs in spinless and spinful systems. Remarkably, we find that increasing the hopping strength between electrons may transform an ASM into an insulator with both symmetries and electron fillings of crystal are preserved. The induced insulators inevitably are topologically non-trivial and at least are obstructed atomic insulators (OAIs) that are labeled as trivial insulator in topological quantum chemistry website. Particularly, using silicon as an example, we show ASM criterion can discover the OAIs missed by the recently proposed criterion of filling enforced OAI. Our work not only establishes an efficient way to identify and design non-trivial insulators but also predicts that the group-IV elemental semiconductors are ideal candidate materials for OAI.
Strong light-matter interactions in both the single-emitter and collective strong coupling regimes attract significant attention due to emerging quantum and nonlinear optics applications, as well as opportunities for modifying material-related proper
ties. Further exploration of these phenomena requires an appropriate theoretical methodology, which is demanding since polaritons are at the intersection between quantum optics, solid state physics and quantum chemistry. Fortunately, however, nanoscale polaritons can be realized in small plasmon-molecule systems, which in principle allows treating them using ab initio methods, although this has not been demonstrated to date. Here, we show that time-dependent density-functional theory (TDDFT) calculations can access the physics of nanoscale plasmon-molecule hybrids and predict vacuum Rabi splitting in a system comprising a few-hundred-atom aluminum nanoparticle interacting with one or several benzene molecules. We show that the cavity quantum electrodynamics approach holds down to resonators on the order of a few cubic nanometers, yielding a single-molecule coupling strength exceeding 200 meV due to a massive vacuum field value of 4.5 V/nm. In a broader perspective, our approach enables parameter-free in-depth studies of polaritonic systems, including ground state, chemical and thermodynamic modifications of the molecules in the strong-coupling regime, which may find important use in emerging applications such as cavity enhanced catalysis.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
