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We predict the universal power law dependence of localization length on magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference. Physically, this dependence shows up in an anomalously large negative magnetoresistance in the hopping regime. The reason for the universality is that the problem of the electron tunneling in a random media belongs to the same universality class as directed polymer problem even in the case of wave functions of random sign. We present numerical simulations which prove this conjecture. We discuss the existing experiments that show anomalously large magnetoresistance. We also discuss the role of localized spins in real materials and the spin polarizing effect of magnetic field.
We have studied the AC response of a hopping model in the variable range hopping regime by dynamical Monte Carlo simulations. We find that the conductivity as function of frequency follows a universal scaling law. We also compare the numerical result
Despite the fact that the problem of interference mechanism of magnetoresistance in semiconductors with hopping conductivity was widely discussed, most of existing studies were focused on the model of spinless electrons. This model can be justified o
We present a theory for tunneling spectroscopy in a break-junction semiconductor device for materials in which the electronic conduction mechanism is hopping transport. Starting from the conventional expression for the hopping current we develop an e
We study many-body localization (MBL) in a one-dimensional system of spinless fermions with a deterministic aperiodic potential in the presence of long-range interactions or long-range hopping. Based on perturbative arguments there is a common belief
We develop a theory of magnetoresistance based on variable-range hopping. An exponentially large, low-field and necessarily positive magnetoresistance effect is predicted in the presence of Hubbard interaction and spin-dynamics under certain conditio