اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدImproved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
163
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We report the fabrication of ionic liquid (IL) gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron mobility about 60 cm2V-1s-1 at 250 K in ionic liquid gated devices exceeds significantly that of comparable back-gated devices. IL-FETs display a mobility increase from about 100 cm2V-1s-1 at 180 K to about 220 cm2V-1s-1 at 77 K in good agreement with the true channel mobility determined from four-terminal measurements, ambipolar behavior with a high ON/OFF ratio >107 (104) for electrons (holes), and a near ideal sub-threshold swing of about 50 mV/dec at 250 K. We attribute the observed performance enhancement, specifically the increased carrier mobility that is limited by phonons, to the reduction of the Schottky barrier at the source and drain electrode by band bending caused by the ultrathin ionic-liquid dielectric layer.
قيم البحث
اقرأ أيضاً
We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating with the
SiO2 /Si++ substrate. Thanks to this wide modulation we show the controlled evolution from semiconductor to metallic-like behavior in the nanowire. This work provides the first systematic study of ionic-liquid gating in electronic devices based on individual III-V semiconductor nanowires: we argue this architecture opens the way to a wide range of fundamental and applied studies from the phase-transitions to bioelectronics.
We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time and low-frequency current fluctuations as the sensing parameters. The back-gated MoS2 thin-film field-eff
ect transistors were fabricated on Si/SiO2 substrates and intentionally aged for a month to verify reliability and achieve better current stability. The same devices with the channel covered by 10 nm of Al2O3 were used as reference samples. The exposure to ethanol, acetonitrile, toluene, chloroform, and methanol vapors results in drastic changes in the source-drain current. The current can increase or decrease by more than two-orders of magnitude depending on the analyte. The reference devices with coated channel did not show any response. It was established that transient time of the current change and the normalized spectral density of the low-frequency current fluctuations can be used as additional sensing parameters for selective gas detection with thin-film MoS2 transistors.
Achieving good quality Ohmic contacts to van der Waals materials is a challenge, since at the interface between metal and van der Waals material, different conditions can occur, ranging from the presence of a large energy barrier between the two mate
rials to the metallization of the layered material below the contacts. In black phosphorus (bP), a further challenge is its high reactivity to oxygen and moisture, since the presence of uncontrolled oxidation can substantially change the behavior of the contacts. In this study, we investigate the influence of the metal used for the contacts to bP against the variability between different flakes and different samples, using three of the most used metals as contacts: Chromium, Titanium, and Nickel. Using the transfer length method, from an analysis of ten devices, both at room temperature and at low temperature, Ni results to be the best metal for Ohmic contacts to bP, providing the lowest contact resistance and minimum scattering between different devices. Moreover, we investigate the gate dependence of the current-voltage characteristics of these devices. In the accumulation regime, we observe good linearity for all metals investigated.
Transition-metal dichalcogenides (TMDCs) are important class of two-dimensional (2D) layered materials for electronic and optoelectronic applications, due to their ultimate body thickness, sizable and tunable bandgap, and decent theoretical room-temp
erature mobility of hundreds to thousands cm2/Vs. So far, however, all TMDCs show much lower mobility experimentally because of the collective effects by foreign impurities, which has become one of the most important limitations for their device applications. Here, taking MoS2 as an example, we review the key factors that bring down the mobility in TMDC transistors, including phonons, charged impurities, defects, and charge traps. We introduce a theoretical model that quantitatively captures the scaling of mobility with temperature, carrier density and thickness. By fitting the available mobility data from literature over the past few years, we are able to obtain the density of impurities and traps for a wide range of transistor structures. We show that interface engineering such as oxide surface passivation, high-k dielectrics and BN encapsulation could effectively reduce the impurities, leading to improved device performances. For few-layer TMDCs, we analytically model the lopsided carrier distribution to elucidate the experimental increase of mobility with the number of layers. From our analysis, it is clear that the charge transport in TMDC samples is a very complex problem that must be handled carefully. We hope that this Review can provide new insights and serve as a starting point for further improving the performance of TMDC transistors.
Monolayer transition metal dichalcogenides (TMD) have numerous potential applications in ultrathin electronics and photonics. The exposure of TMD based devices to light generates photo-carriers resulting in an enhanced conductivity, which can be effe
ctively used, e.g., in photodetectors. If the photo-enhanced conductivity persists after removal of the irradiation, the effect is known as persistent photoconductivity (PPC). Here we show that ultraviolet light (wavelength = 365 nm) exposure induces an extremely long-living giant PPC (GPPC) in monolayer MoS2 (ML-MoS2) field-effect transistors (FET) with a time constant of ~30 days. Furthermore, this effect leads to a large enhancement of the conductivity up to a factor of 107. In contrast to previous studies in which the origin of the PPC was attributed to extrinsic reasons such as trapped charges in the substrate or adsorbates, we unambiguously show that the GPPC arises mainly from the intrinsic properties of ML-MoS2 such as lattice defects that induce a large amount of localized states in the forbidden gap. This finding is supported by a detailed experimental and theoretical study of the electric transport in TMD based FETs as well as by characterization of ML-MoS2 with scanning tunneling spectroscopy, high-resolution transmission electron microscopy, and photoluminescence measurements. The obtained results provide a basis towards the defect-based engineering of the electronic and optical properties of TMDs for device applications.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
