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Exchange bias (EB) and the training effects (TE) in an antiferromagnetically coupled La0.7Sr0.3MnO3 / SrRuO3 superlattices were studied in the temperature range 1.8 - 150 K. Strong antiferromagnetic (AFM) interlayer coupling is evidenced from AC - susceptibility measurements. Below 100 K, vertical magnetization shifts are present due to the two remanent states corresponding to the two ferromagnetic (FM) layers at FM and AFM coupling condition. After field cooling (FC), significant decrease in the exchange bias field (HEB) is observed when cycling the system through several consecutive hysteresis loops. Quantitative analysis for the variation of HEB vs. number of field cycles (n) indicates an excellent agreement between the theory, based on triggered relaxation phenomena, and our experimental observations. Nevertheless, the crucial fitting parameter K indicates smooth training effect upon repeated field cycling, in accordance with our observation.
Magnetic properties of a series of (La0.7Sr0.3MnO3/SrRuO3) superlattices, where the SrRuO3 layer thickness is varying, are examined. A room-temperature magnetocaloric effect is obtained owing to the finite size effect which reduces the TC of La0.7Sr0
Transverse thermoelectric effects in response to an out-of-plane heat current have been studied in an external magnetic field for ferromagnetic superlattices consisting of La0.67Sr0.33MnO3 and SrRuO3 layers. The superlattices were fabricated on SrTiO
Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers with macro
Oxide heterostructures exhibit a rich variety of magnetic and transport properties which arise due to contact at an interface. This can lead to surprising effects that are very different from the bulk properties of the materials involved. We report t
Antiferromagnetic materials are outstanding candidates for next generation spintronic applications, because their ultrafast spin dynamics makes it possible to realize several orders of magnitude higher-speed devices than conventional ferromagnetic ma