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تسجيل مستخدم جديدComment on Reconciling results of tunnelling experiments on (Ga,Mn)As arXiv:1102.3267v2 by Dietl and Sztenkiel
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We comment on the recent paper Reconciling results of tunnelling experiments on (Ga,Mn)As arXiv:1102.3267v2 by Dietl and Sztenkiel. They claimed that the oscillations observed in the d2I/dV2-V characteristics in our studies on the resonant tunneling spectroscopy on GaMnAs, are not attributed to the resonant levels in the GaMnAs layer but to the two-dimensional interfacial subbands in the GaAs:Be layer. Here, we show that this interpretation is not able to explain our experimental results and our conclusions remain unchanged.
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A theoretical model is presented which allows to reconcile findings of scanning tunnelling spectroscopy for (Ga,Mn)As [Richardella et al. Science 327, 66 (2010)] with results for tunneling across (Ga,Mn)As thin layers [Ohya et al. Nature Phys. 7, 342
(2011); Phys. Rev. Lett. 104, 167204 (2010)]. According to the proposed model, supported by a self-consistent solution of the Poisson and Schroedinger equations, a nonmonotonic behaviour of differential tunnel conductance as a function of bias is associated with the appearance of two-dimensional hole subbands rather in the GaAs:Be electrode than in the (Ga,Mn)As layer.
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