اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدHall effect of FeTe and Fe(Se_1-x_Te_x_) thin films
107
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The Hall effect is investigated in thin-film samples of iron-chalcogenide superconductors in detail. The Hall coefficient (RH) of FeTe and Fe(Se1-xTex) exhibits a similar positive value around 300 K, indicating that the high-temperature normal state is dominated by hole-channel transport. FeTe exhibits a sign reversal from positive to negative across the transition to the low-temperature antiferromagnetic state, indicating the occurrence of drastic reconstruction in the band structure. The mobility analysis using the carrier density theoretically calculated reveals that the mobility of holes is strongly suppressed to zero, and hence the electric transport looks to be dominated by electrons. The Se substitution to Te suppresses the antiferromagnetic long-range order and induces superconductivity instead. The similar mobility analysis for Fe(Se0.4Te0.6) and Fe(Se0.5Te0.5) thin films shows that the mobility of electrons increases with decreasing temperature even in the paramagnetic state, and keeps sufficiently high values down to the superconducting transition temperature. From the comparison between FeTe and Fe(Se1-xTex), it is suggested that the coexistence of itinerant carriers both in electron and hole channels is indispensable for the occurrence of superconductivity.
قيم البحث
اقرأ أيضاً
We have epitaxially grown c-axis oriented SrxLa1-xCuO2 thin films by rf sputtering on KTaO3 substrates with x = 0.12. The as-grown deposits are insulating and a series of superconducting films with various Tc(R=0) up to 26 K have been obtained by in-
situ oxygen reduction. Transport measurements in the ab plane of these samples have been undertaken. We report original results on the temperature dependence of the Hall effect and on the anisotropic magnetoresistance (T > Tc). We discuss the magnitude of upper critical fields and anisotropy, the Hall effect, which presents changes of sign indicative of the existence of two types of carriers, the normal state magnetoresistance, negative in parallel magnetic field, a possible signature of spin scattering. These properties are compared to those of hole-doped cuprates, such as BiSr(La)CuO with comparable Tc.
Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick films, the s
aturation magnetization and conductivity are respectively 453 emu/cm^3 and 225 1/(Ohm cm) at room temperature. The Verwey transition is at 117 K. The Hall effect indicates an electron concentration corresponding to 0.22 electrons per formula unit at room temperature. Normal and anomalous Hall effect both have a negative sign.
Pulsed laser deposition was employed to grow thin films of the Heusler compounds Co_2MnSi and Co_2FeSi. Epitaxial growth was realized both directly on MgO (100) and on a Cr or Fe buffer layer. Structural analysis by x-ray and electron diffraction sho
ws for both materials the ordered L2_1 structure. Bulk magnetization was determined with a SQUID magnetometer. The values agree with the Slater-Pauling rule for half-metallic Heusler compounds. On the films grown directly on the substrate measurements of the Hall effect have been performed. The normal Hall effect is nearly temperature independent and points towards a compensated Fermi surface. The anomalous contribution is found to be dominated by skew scattering. A remarkable sign change of both normal and anomalous Hall coefficients is observed on changing the valence electron count from 29 (Mn) to 30 (Fe).
FeTe, a non-superconducting parent compound in the iron-chalcogenide family, becomes superconducting after annealing in oxygen. Under the presence of magnetism, spin-orbit coupling, inhomogeneity and lattice distortion, the nature of its superconduct
ivity is not well understood. Here, we combined mutual inductance technique with magneto transport to study the magnetization and superconductivity of FeTe thin films. We found that the films with the highest Tc showed non-saturating superfluid density and a strong magnetic hysteresis distinct from that in a homogeneous superconductor. Such hysteresis can be well explained by a two-level critical state model and suggested the importance of granularity to superconductivity in this compound.
We study Hall effect in sputtered NixPt1-x thin films with different Ni concentrations. Temperature, magnetic field and angular dependencies are analyzed and the phase diagram of NiPt thin films is obtained. It is found that films with sub-critical N
i concentration exhibit cluster-glass behavior at low temperatures with a perpendicular magnetic anisotropy below the freezing temperature. Films with over-critical Ni concentration are ferromagnetic with parallel anisotropy. At the critical concentration the state of the film is strongly frustrated. Such films demonstrate canted magnetization with the easy axis rotating as a function of temperature. The magnetism appears via consecutive paramagnetic - cluster glass - ferromagnetic transitions, rather than a single second-order phase transition. But most remarkably, the extraordinary Hall effect changes sign at the critical concentration. We suggest that this is associated with a reconstruction of the electronic structure of the alloy at the normal metal - ferromagnet quantum phase transition.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
