اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSemiconductor quantum tubes: dielectric modulation and excitonic response
125
0
0.0
(
0
)
تأليف
David Kammerlander
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We study theoretically the optical properties of quantum tubes, one-dimensional semiconductor nanostructures where electrons and holes are confined to a cylindrical shell. In these structures, which bridge between 2D and 1D systems, the electron-hole interaction may be modulated by a dielectric substance outside the quantum tube and possibly inside its core. We use the exact Greens function for the appropriate dielectric configuration and exact diagonalization of the electron-hole interaction within an effective mass description to predict the evolution of the exciton binding energy and oscillator strength. Contrary to the homogeneous case, in dielectrically modulated tubes the exciton binding is a function of the tube diameter and can be tuned to a large extent by structure design and proper choice of the dielectric media.
قيم البحث
اقرأ أيضاً
Two-dimensional charge carrier accumulation at oxide heterointerfaces presents a paradigm shift for oxide electronics. Like a capacitor, interfacial charge buildup couples to an electric field across the dielectric medium. To prevent the so-called po
lar catastrophe, several charge screening mechanisms emerge, including polar distortions and interfacial intermixing which reduce the sharpness of the interface. Here, we examine how atomic intermixing at oxide interfaces affect the balance between polar distortions and electric potential across the dielectric medium. We find that intermixing moves the peak charge distribution away from the oxide/oxide interface; thereby changing the direction of polar distortions away from this boundary with minimal effect on the electric field. This opposing electric field and polar distortions is equivalent to the transient phase transition tipping point observed in double well ferroelectrics; resulting in an anomalous dielectric response -- a possible signature of local negative differential capacitance, with implications for designing dissipationless oxide electronics.
We carry out first-principles calculations of the nonlinear dielectric response of short-period ferroelectric superlattices. We compute and store not only the total polarization, but also the Wannier-based polarizations of individual atomic layers, a
s a function of electric displacement field, and use this information to construct a model capable of predicting the nonlinear dielectric response of an arbitrary superlattice sequence. We demonstrate the successful application of our approach to superlattices composed of SrTiO$_3$, CaTiO$_3$, and BaTiO$_3$ layers.
We present a theoretical analysis of the effect of dielectric confinement on the Coulomb interaction in dielectrically modulated quantum structures. We discuss the implications of the strong enhancement of the electron-hole and electron-electron coup
ling for two specific examples: (i) GaAs-based quantum wires with remote oxide barriers, where combined quantum and dielectric confinements are predicted to lead to room temperature exciton binding, and (ii) semiconductor quantum dots in colloidal environments, where the many-body ground states and the addition spectra are predicted to be drastically altered by the dielectric environment.
We depict the use of x-ray diffraction as a tool to directly probe the strain status in rolled-up semiconductor tubes. By employing continuum elasticity theory and a simple model we are able to simulate quantitatively the strain relaxation in perfect
crystalline III-V semiconductor bi- and multilayers as well as in rolled-up layers with dislocations. The reduction in the local elastic energy is evaluated for each case. Limitations of the technique and theoretical model are discussed in detail.
Proximity to phase transitions (PTs) is frequently responsible for the largest dielectric susceptibilities in ferroelectrics. The impracticality of using temperature as a control parameter to reach those large responses has motivated the design of so
lid solutions with phase boundaries between different polar phases at temperatures (typically room temperature) significantly lower than the paraelectric-ferroelectric critical temperature. The flat energy landscapes close to these PTs give rise to polarization rotation under external stimuli, being responsible for the best piezoelectrics so far and a their huge market. But this approach requires complex chemistry to achieve temperature-independent PT boundaries and often involves lead-containing compounds. Here we report that such a bridging state is possible in thin films of chemically simple materials such as BaTiO3. A coexistence of tetragonal, orthorhombic and their bridging low-symmetry phases are shown to be responsible for the continuous vertical polarization rotation, recreating a smear in-transition state and leading to giant temperature-independent dielectric response. These features are distinct from those of single crystals, multi-domain crystals, ceramics or relaxor ferroelectrics, requiring a different description. We believe that other materials can be engineered in a similar way to form a class of ferroelectrics, in which MPB solid solutions are also included, that we propose to coin as transitional ferroelectrics.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
