ترغب بنشر مسار تعليمي؟ اضغط هنا

Cyclotron effect on coherent spin precession of two-dimensional electrons

116   0   0.0 ( 0 )
 نشر من قبل Tobias Korn
 تاريخ النشر 2009
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We investigate the spin dynamics of high-mobility two-dimensional electrons in GaAs/AlGaAs quantum wells grown along the $[001]$ and $[110]$ directions by time-resolved Faraday rotation at low temperatures. In measurements on the $(001)$-grown structures without external magnetic fields, we observe coherent oscillations of the electron spin polarization about the effective spin-orbit field. In non-quantizing magnetic fields applied normal to the sample plane, the cyclotron motion of the electrons rotates the effective spin-orbit field. This rotation leads to fast oscillations in the spin polarization about a non-zero value and a strong increase in the spin dephasing time in our experiments. These two effects are absent in the $(110)$-grown structure due to the different symmetry of its effective spin-orbit field. The measurements are in excellent agreement with our theoretical model.



قيم البحث

اقرأ أيضاً

We present a method to create spin-polarized beams of ballistic electrons in a two-dimensional electron system in the presence of spin-orbit interaction. Scattering of a spin-unpolarized injected beam from a lithographic barrier leads to the creation of two fully spin-polarized side beams, in addition to an unpolarized specularly reflected beam. Experimental magnetotransport data on InSb/InAlSb heterostructures demonstrate the spin-polarized reflection in a mesoscopic geometry, and confirm our theoretical predictions.
Spin-Hall conductivity (SHC) of fully relativistic (4x4 matrix) Dirac electrons is studied based on the Kubo formula aiming at possible application to bismuth and bismuth-antimony alloys. It is found that there are two distinct contributions to SHC, one only from the states near the Fermi energy and the other from all the occupied states. The latter remains even in the insulating state, i.e., when the chemical potential lies in the band-gap, and turns to have the same dependences on the chemical potential as the orbital susceptibility (diamagnetism), a surprising fact. These results are applied to bismuth-antimony alloys and the doping dependence of the SHC is proposed.
282 - M. A. Cazalilla , H. Ochoa , 2013
We propose to engineer time-reversal-invariant topological insulators in two-dimensional (2D) crystals of transition metal dichalcogenides (TMDCs). We note that, at low doping, semiconducting TMDCs under shear strain will develop spin-polarized Landa u levels residing in different valleys. We argue that gaps between Landau levels in the range of $10-100$ Kelvin are within experimental reach. In addition, we point out that a superlattice arising from a Moire pattern can lead to topologically non-trivial subbands. As a result, the edge transport becomes quantized, which can be probed in multi-terminal devices made using strained 2D crystals and/or heterostructures. The strong $d$ character of valence and conduction bands may also allow for the investigation of the effects of electron correlations on the topological phases.
Spin-Hall conductivity $sigma_{{rm s}xy}$ and orbital susceptibility $chi$ are investigated for the anisotropic Wolff Hamiltonian, which is an effective Hamiltonian common to Dirac electrons in solids. It is found that, both for $sigma_{{rm s}xy}$ an d $chi$, the effect of anisotropy appears only in the prefactors, which is given as the Gaussian curvature of the energy dispersion, and their functional forms are equivalent to those of the isotropic Wolff Hamiltonian. As a result, it is revealed that the relationship between the spin Hall conductivity and the orbital susceptibility in the insulating state, $sigma_{{rm s}xy}=(3mc^2/hbar e)chi$, which was firstly derived for the isotropic Wolff Hamiltonian, is also valid for the anisotropic Wolff Hamiltonian. Based on this theoretical finding, the magnitude of spin-Hall conductivity is estimated for bismuth and its alloys with antimony by that of orbital susceptibility, which has good correspondence between theory and experiments. The magnitude of spin-Hall conductivity turns out to be as large as $esigma_{{rm s}xy} sim 10^4 {Omega}^{-1}{rm cm}^{-1}$, which is about 100 times larger than that of Pt.
We present piezoresistance measurements in modulation doped AlAs quantum wells where the two-dimensional electron system occupies two conduction band valleys with elliptical Fermi contours. Our data demonstrate that, at low temperatures, the strain g auge factor (the fractional change in resistance divided by the samples fractional length change) in this system exceeds 10,000. Moreover, in the presence of a moderate magnetic field perpendicular to the plane of the two-dimensional system, gauge factors up to 56,000 can be achieved. The piezoresistance data can be explained qualitatively by a simple model that takes into account intervalley charge transfer.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا