اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدConductance fluctuations and field asymmetry of rectification in graphene
95
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We investigate conductance fluctuations as a function of carrier density $n$ and magnetic field in diffusive mesoscopic samples made from monolayer and bilayer graphene. We show that the fluctuations correlation energy and field, which are functions of the diffusion coefficient, have fundamentally different variations with $n$, illustrating the contrast between massive and massless carriers. The field dependent fluctuations are nearly independent of $n$, but the $n$-dependent fluctuations are not universal and are largest at the charge neutrality point. We also measure the second order conductance fluctuations (mesoscopic rectification). Its field asymmetry, due to electron-electron interaction, decays with conductance, as predicted for diffusive systems.
قيم البحث
اقرأ أيضاً
We study fluctuations of the conductance of micron-sized graphene devices as a function of the Fermi energy and magnetic field. The fluctuations are studied in combination with analysis of weak localization which is determined by the same scattering
mechanisms. It is shown that the variance of conductance fluctuations depends not only on inelastic scattering that controls dephasing but also on elastic scattering. In particular, contrary to its effect on weak localization, strong intervalley scattering suppresses conductance fluctuations in graphene. The correlation energy, however, is independent of the details of elastic scattering and can be used to determine the electron temperature of graphene structures.
Fundamental Casimir-Onsager symmetry rules for linear response do not apply to non linear transport. This motivates the investigation of nonlinear dc conductance of mesoscopic GaAs/GaAlAs rings in a 2 wire configuration. The second order current resp
onse to a potential bias is of particular interest. It is related to the sensitivity of conductance fluctuations to this bias and contains information on electron interactions not included in the linear response. In contrast with the linear response which is a symmetric function of magnetic field we find that this second order response exhibits a field dependence which contains an antisymmetric part. We analyse the flux periodic and aperiodic components of this asymmetry and find that they only depend on the conductance of the rings which is varied by more than an order of magnitude. These results are in good agreement with recent theoretical predictions relating this asymmetric response to the electron interactions.
We investigate the mesoscopic disorder induced rms conductance variance $delta G$ in a few layer graphene nanoribbon (FGNR) contacted by two superconducting (S) Ti/Al contacts. By sweeping the back-gate voltage, we observe pronounced conductance fluc
tuations superimposed on a linear background of the two terminal conductance G. The linear gate-voltage induced response can be modeled by a set of inter-layer and intra-layer capacitances. $delta G$ depends on temperature T and source-drain voltage $V_{sd}$. $delta G$ increases with decreasing T and $|V_{sd}|$. When lowering $|V_{sd}|$, a pronounced cross-over at a voltage corresponding to the superconducting energy gap $Delta$ is observed. For $|V_{sd}|ltequiv Delta$ the fluctuations are markedly enhanced. Expressed in the conductance variance $G_{GS}$ of one graphene-superconducutor (G-S) interface, values of 0.58 e^2/h are obtained at the base temperature of 230 mK. The conductance variance in the sub-gap region are larger by up to a factor of 1.4-1.8 compared to the normal state. The observed strong enhancement is due to phase coherent charge transfer caused by Andreev reflection at the nanoribbon-superconductor interface.
We study the non-linear conductance $mathcal{G}simpartial^2I/partial V^2|_{V=0}$ in coherent quasi-1D weakly disordered metallic wires. The analysis is based on the calculation of two fundamental correlators (correlations of conductances functional d
erivatives and correlations of injectivities), which are obtained explicitly by using diagrammatic techniques. In a coherent wire of length $L$, we obtain $mathcal{G}sim0.006,E_mathrm{Th}^{-1}$ (and $langlemathcal{G}rangle=0$), where $E_mathrm{Th}=D/L^2$ is the Thouless energy and $D$ the diffusion constant; the small dimensionless factor results from screening, i.e. cannot be obtained within a simple theory for non-interacting electrons. Electronic interactions are also responsible for an asymmetry under magnetic field reversal: the antisymmetric part of the non-linear conductance (at high magnetic field) being much smaller than the symmetric one, $mathcal{G}_asim0.001,(gE_mathrm{Th})^{-1}$, where $ggg1$ is the dimensionless (linear) conductance of the wire. Weakly coherent regimes are also studied: for $L_varphill L$, where $L_varphi$ is the phase coherence length, we get $mathcal{G}sim(L_varphi/L)^{7/2}E_mathrm{Th}^{-1}$, and $mathcal{G}_asim(L_varphi/L)^{11/2}(gE_mathrm{Th})^{-1}llmathcal{G}$ (at high magnetic field). When thermal fluctuations are important, $L_Tll L_varphill L$ where $L_T=sqrt{D/T}$, we obtain $mathcal{G}sim(L_T/L)(L_varphi/L)^{7/2}E_mathrm{Th}^{-1}$ (the result is dominated by the effect of screening) and $mathcal{G}_asim(L_T/L)^2(L_varphi/L)^{7/2}(gE_mathrm{Th})^{-1}$. All the precise dimensionless prefactors are obtained. Crossovers towards the zero magnetic field regime are also analysed.
We show a dramatic deviation from ergodicity for the conductance fluctuations in graphene. In marked contrast to the ergodicity of dirty metals, fluctuations generated by varying magnetic field are shown to be much smaller than those obtained when sw
eeping Fermi energy. They also exhibit a strongly anisotropic response to the symmetry-breaking effects of a magnetic field, when applied perpendicular or parallel to the graphene plane. These results reveal a complex picture of quantum interference in graphene, whose description appears more challenging than for conventional mesoscopic systems.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
