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We study the behaviour of the magnetization in a half-metallic ferromagnet/nonmagnetic insulator/ferromagnetic metal/paramagnetic metal (FM1/NI/FM2/PM) tunnel junction. It is calculated self-consistently within the nonequilibrium Keldysh formalism. The magnetic regions are treated as band ferromagnets and are described by the single-band Hubbard model. We developed a nonequilibrium spectral density approach to solve the Hubbard model approximately in the switching magnet. By applying a voltage to the junction it is possible to switch between antiparallel (AP) and parallel (P) alignment of the magnetizations of the two ferromagnets. The transition from AP to P occurs for positive voltages while the inverse transition from P to AP can be induced by negative voltages only. This behaviour is in agreement with the Slonczewski model of current-induced switching and appears self-consistently within the model, i.e. without using half-classical methods like the Landau-Lifshitz-Gilbert equation.
The time-dependent non-crossing approximation is used to study the transient current in a single electron transistor attached asymmetrically to two leads following a sudden change in the energy of the dot level. We show that for asymmetric coupling,
We report on the switching of the in-plane magnetization of thin yttrium iron garnet (YIG)/Pt bilayers induced by an electrical current. The switching is either field-induced and assisted by a dc current, or current-induced and assisted by a static m
Using the recently developed Nth-order muffin-tin-orbital (NMTO) based downfolding technique we revisit the electronic properties of half-metallic ferromagnets, the semi-Heusler NiMnSb and rutile CrO2. The NMTO Wannier orbitals for the Mn-d and Cr-t2
Antiferromagnets are robust to external electric and magnetic fields, and hence are seemingly uncontrollable. Recent studies, however, realized the electrical manipulations of antiferromagnets by virtue of the antiferromagnetic Edelstein effect. We p
We test whether current-induced magnetization switching due to spin-transfer-torque in ferromagnetic/non-magnetic/ferromagnetic (F/N/F) trilayers changes significantly when scattering within the N-metal layers is changed from ballistic to diffusive.