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We present measurements of the local tunneling density of states in the low temperature ordered state of PrFe4P12. The temperature dependencies of the Fermi level density of states and of the integrated density of states at low bias voltages show anomalies at T=6.5 K, the onset of multipolar ordering as detected by specific heat and other macroscopic measurements. In the ordered phase, we find a local density of states with a V-shape form, indicating a partial gap opening over the Fermi surface. The size of the gap according to the tunneling spectra is about 2 meV.
Pr 4f electronic states in Pr-based filled skutterudites PrT4X12(T=Fe and Ru; X=P and Sb) have been studied by high-resolution bulk-sensitive Pr 3d-4f resonance photoemission. A very strong spectral intensity is observed just below the Fermi level in
We have investigated the intermediate valence narrow-gap semiconductor SmB6 at low temperatures using both conventional spear-anvil type point contacts as well as mechanically controllable break junctions. The zero-bias conductance varied between les
Neutron diffraction measurements on a single crystal of CeGe1.76 reveal a complex series of magnetic transitions at low temperature. At T_N = 7 K, there is a transition from a paramagnetic state at higher temperature to an incommensurate magnetic str
Element-specific x-ray resonant magnetic scattering investigations were performed to determine the magnetic structure of Eu in EuRh2As2. In the temperature range from 46 K down to 6 K, an incommensurate antiferromagnetic (ICM)structure with a tempera
The compound BaFe2Se3 (Pnma) has been synthesized in the form of single crystals with the average composition Ba0.992Fe1.998Se3. The Moessbauer spectroscopy used for investigation of the valence states of Fe in this compound at temperature ranging fr