اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدFilling factor dependence of the fractional quantum Hall effect gap
161
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We directly measure the chemical potential jump in the low-temperature limit when the filling factor traverses the nu = 1/3 and nu = 2/5 fractional gaps in two-dimensional (2D) electron system in GaAs/AlGaAs single heterojunctions. In high magnetic fields B, both gaps are linear functions of B with slopes proportional to the inverse fraction denominator, 1/q. The fractional gaps close partially when the Fermi level lies outside. An empirical analysis indicates that the chemical potential jump for an IDEAL 2D electron system, in the highest accessible magnetic fields, is proportional to q^{-1}B^{1/2}.
قيم البحث
اقرأ أيضاً
We studied neutral excitations in a two-dimensional electron system with an orbital momentum $Delta M = 1$ and spin projection over magnetic field axis $Delta S_z = 1$ in the vicinity of a filling factor of 3/2. It is shown that the 3/2 state is a si
ngular point in the filling factor dependence of the spin ordering of the two-dimensional electron system. In the vicinity of $ u=3/2$, a significant increase in the relaxation time ($tau = 13$ $mutext{s}$) for the excitations to the ground state is exhibited even though the number of vacancies in the lowest energy level is macroscopically large. The decrease of the relaxation rate is related to the spin texture transformation in the ground state induced by spin flips and electron density rearrangement. We claim the 3/2 state is a locally incompressible fractional quantum Hall state.
In the fractional quantum Hall effect regime we measure diagonal ($rho_{xx}$) and Hall ($rho_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions, together with capac
itance between 2DES and the gate. We observe 1/3- and 2/3-fractional quantum Hall effect at rather low magnetic fields where corresponding fractional minima in the thermodynamical density of states have already disappeared manifesting complete suppression of the quasiparticle energy gaps.
A simple one-dimensional model is proposed, in which N spinless repulsively interacting fermions occupy M>N degenerate states. It is argued that the energy spectrum and the wavefunctions of this system strongly resemble the spectrum and wavefunctions
of 2D electrons in the lowest Landau level (the problem of the Fractional Quantum Hall Effect). In particular, Laughlin-type wavefunctions describe ground states at filling factors v = N/M = 1(2m+1). Within this model the complimentary wavefunction for v = 1-1/(2m + 1) is found explicitly and extremely simple ground state wavefunctions for arbitrary odd-denominator filling factors are proposed.
A conceptual difficulty in formulating the density functional theory of the fractional quantum Hall effect is that while in the standard approach the Kohn-Sham orbitals are either fully occupied or unoccupied, the physics of the fractional quantum Ha
ll effect calls for fractionally occupied Kohn-Sham orbitals. This has necessitated averaging over an ensemble of Slater determinants to obtain meaningful results. We develop an alternative approach in which we express and minimize the grand canonical potential in terms of the composite fermion variables. This provides a natural resolution of the fractional-occupation problem because the fully occupied orbitals of composite fermions automatically correspond to fractionally occupied orbitals of electrons. We demonstrate the quantitative validity of our approach by evaluating the density profile of fractional Hall edge as a function of temperature and the distance from the delta dopant layer and showing that it reproduces edge reconstruction in the expected parameter region.
We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor nu=1/3 increase
s LINEARLY with magnetic field and is coincident with that for nu=2/3, reflecting the electron-hole symmetry in the spin-split Landau level. In low magnetic fields, at the ground-state spin transition for nu=2/3, a correlated behavior of the nu=1/3 and nu=2/3 gaps is observed.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
