ترغب بنشر مسار تعليمي؟ اضغط هنا

Anderson localization from classical trajectories

271   0   0.0 ( 0 )
 نشر من قبل Alexander Altland
 تاريخ النشر 2008
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We show that Anderson localization in quasi-one dimensional conductors with ballistic electron dynamics, such as an array of ballistic chaotic cavities connected via ballistic contacts, can be understood in terms of classical electron trajectories only. At large length scales, an exponential proliferation of trajectories of nearly identical classical action generates an abundance of interference terms, which eventually leads to a suppression of transport coefficients. We quantitatively describe this mechanism in two different ways: the explicit description of transition probabilities in terms of interfering trajectories, and an hierarchical integration over fluctuations in the classical phase space of the array cavities.



قيم البحث

اقرأ أيضاً

We present a trajectory-based semiclassical calculation of the full counting statistics of quantum transport through chaotic cavities, in the regime of many open channels. Our method to obtain the $m$th moment of the density of transmission eigenvalu es requires two correlated sets of $m$ classical trajectories, therefore generalizing previous works on conductance and shot noise. The semiclassical results agree, for all values of $m$, with the corresponding predictions from random matrix theory.
We consider the dynamics of an electron in an infinite disordered metallic wire. We derive exact expressions for the probability of diffusive return to the starting point in a given time. The result is valid for wires with or without time-reversal sy mmetry and allows for the possibility of topologically protected conducting channels. In the absence of protected channels, Anderson localization leads to a nonzero limiting value of the return probability at long times, which is approached as a negative power of time with an exponent depending on the symmetry class. When topologically protected channels are present (in a wire of either unitary or symplectic symmetry), the probability of return decays to zero at long time as a power law whose exponent depends on the number of protected channels. Technically, we describe the electron dynamics by the one-dimensional supersymmetric non-linear sigma model. We derive an exact identity that relates any local dynamical correlation function in a disordered wire of unitary, orthogonal, or symplectic symmetry to a certain expectation value in the random matrix ensemble of class AIII, CI, or DIII, respectively. The established exact mapping from one- to zero-dimensional sigma model is very general and can be used to compute any local observable in a disordered wire.
The interplay between interaction and disorder-induced localization is of fundamental interest. This article addresses localization physics in the fractional quantum Hall state, where both interaction and disorder have nonperturbative consequences. W e provide compelling theoretical evidence that the localization of a single quasiparticle of the fractional quantum Hall state at filling factor $ u=n/(2n+1)$ has a striking {it quantitative} correspondence to the localization of a single electron in the $(n+1)$th Landau level. By analogy to the dramatic experimental manifestations of Anderson localization in integer quantum Hall effect, this leads to predictions in the fractional quantum Hall regime regarding the existence of extended states at a critical energy, and the nature of the divergence of the localization length as this energy is approached. Within a mean field approximation these results can be extended to situations where a finite density of quasiparticles is present.
We construct a model to study the localization properties of nanowires of dopants in silicon (Si) fabricated by precise ionic implantation or STM lithography. Experiments have shown that Ohms law holds in some cases, in apparent defiance to the Ander son localization theory in one dimension. We investigate how valley interference affects the traditional theory of electronic structure of disordered systems. Each isolated donor orbital is realistically described by multi-valley effective mass theory (MV-EMT). We extend this model to describe chains of donors as a linear combination of dopant orbitals. Disorder in donor positioning is taken into account, leading to an intricate disorder distribution of hoppings between nearest neighbor donor sites (donor-donor tunnel coupling) -- an effect of valley interference. The localization length is obtained for phosphorous (P) donor chains from a transfer matrix approach and is further compared with the chain length. We quantitatively determine the impact of uncertainties $delta R$ in the implantation position relative to a target and also compare our results with those obtained without valley interference. We analyse systematically the aimed inter-donor separation dependence ($R_0$) and show that fairly diluted donor chains ($R_0=7.7$ nm) may be as long as 100 nm before the effective onset of Anderson localization, as long as the positioning error is under a lattice parameter ($delta R <0.543$ nm).
Optomechanical arrays are a promising future platform for studies of transport, many-body dynamics, quantum control and topological effects in systems of coupled photon and phonon modes. We introduce disordered optomechanical arrays, focusing on feat ures of Anderson localization of hybrid photon-phonon excitations. It turns out that these represent a unique disordered system, where basic parameters can be easily controlled by varying the frequency and the amplitude of an external laser field. We show that the two-species setting leads to a non-trivial frequency dependence of the localization length for intermediate laser intensities. This could serve as a convincing evidence of localization in a non-equilibrium dissipative situation.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا