ترغب بنشر مسار تعليمي؟ اضغط هنا

Beam Test of Silicon Strip Sensors for the ZEUS Micro Vertex Detector

107   0   0.0 ( 0 )
 نشر من قبل Ignacio Redondo
 تاريخ النشر 2002
  مجال البحث
والبحث باللغة English




اسأل ChatGPT حول البحث

For the HERA upgrade, the ZEUS experiment has designed and installed a high precision Micro Vertex Detector (MVD) using single sided micro-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 microns, with five intermediate strips (20 micron strip pitch). An extensive test program has been carried out at the DESY-II testbeam facility. In this paper we describe the setup developed to test the ZEUS MVD sensors and the results obtained on both irradiated and non-irradiated single sided micro-strip detectors with rectangular and trapezoidal geometries. The performances of the sensors coupled to the readout electronics (HELIX chip, version 2.2) have been studied in detail, achieving a good description by a Monte Carlo simulation. Measurements of the position resolution as a function of the angle of incidence are presented, focusing in particular on the comparison between standard and newly developed reconstruction algorithms.



قيم البحث

اقرأ أيضاً

To fully exploit the HERA-II upgrade,the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon micro-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 micrometers, with fi ve intermediate strips (20 micrometer strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sensors with three different geometries have been produced by Hamamatsu Photonics K.K. Irradiation tests with reactor neutrons and Co-60 photons have been performed for a small sample of sensors. The results on neutron irradiation (with a fluence of 1 x 10^{13} 1 MeV equivalent neutrons / cm^2) are well described by empirical formulae for bulk damage. The Co-60 photons (with doses up to 2.9 kGy) show the presence of generation currents in the SiO_2-Si interface, a large shift of the flatband voltage and a decrease of the hole mobility.
The silicon-strip tracker of the China Seismo-Electromagnetic Satellite (CSES) consists of two double-sided silicon strip detectors (DSSDs) which provide incident particle tracking information. The low-noise analog ASIC VA140 was used in this study f or DSSD signal readout. A beam test on the DSSD module was performed at the Beijing Test Beam Facility of the Beijing Electron Positron Collider (BEPC) using a 400~800 MeV/c proton beam. The pedestal analysis results, RMSE noise, gain correction, and particle incident position reconstruction of the DSSD module are presented.
133 - A. Polini , I. Brock , S. Goers 2007
In order to extend the tracking acceptance, to improve the primary and secondary vertex reconstruction and thus enhancing the tagging capabilities for short lived particles, the ZEUS experiment at the HERA Collider at DESY installed a silicon strip v ertex detector. The barrel part of the detector is a 63 cm long cylinder with silicon sensors arranged around an elliptical beampipe. The forward part consists of four circular shaped disks. In total just over 200k channels are read out using $2.9 {rm m^2}$ of silicon. In this report a detailed overview of the design and construction of the detector is given and the performance of the completed system is reviewed.
Optical inspection of 1191 silicon micro-strip sensors was performed using a custom made optical inspection setup, employing a machine-learning based approach for the defect analysis and subsequent quality assurance. Furthermore, metrological control of the sensors surface was performed. In this manuscript, we present the analysis of various sensor surface defects. Among these are implant breaks, p-stop breaks, aluminium strip opens, aluminium strip shorts, surface scratches, double metallization layer defects, passivation layer defects, bias resistor defects as well as dust particle identification. The defect detection was done using the application of Convolutional Deep Neural Networks (CDNNs). From this, defective strips and defect clusters were identified, as well as a 2D map of the defects using their geometrical positions on the sensor was performed. Based on the total number of defects found on the sensors surface, a method for the estimation of sensors overall quality grade and quality score was proposed.
Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا