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We numerically investigate the interplay of disorder and electron-electron interactions in the integer quantum Hall effect. In particular, we focus on the behaviour of the electronic compressibility as a function of magnetic field and electron density. We find manifestations of non-linear screening and charging effects around integer filling factors, consistent with recent imaging experiments. Our calculations exhibit $g$-factor enhancement as well as strong overscreening in the centre of the Landau bands. Even though the critical behaviour appears mostly unaffected by interactions, important implications for the phase diagram arise. Our results are in very good agreement with the experimental findings and strongly support the relevance of electron-electron interactions for understanding integer quantum Hall physics.
Time-reversal invariant two-dimensional topological insulators, often dubbed Quantum Spin Hall systems, possess helical edge modes whose ballistic transport is protected by physical symmetries. We argue that, though the time-reversal symmetry (TRS) o
Our magnetotransport measurements of quantum Hall stripes in a high-quality GaAs quantum well in a slightly tilted magnetic field reveal that the orientation of stripes can be changed by temperature. Field-cooling and field-warming measurements, as w
We use the Kubo-Landauer formalism to compute the longitudinal (two-terminal) conductance of a two dimensional electron system placed in a strong perpendicular magnetic field, and subjected to periodic modulations and/or disorder potentials. The scat
We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density ($n_e > 4 times 10^{11}$ cm$^{-2}$) which is expected to favor QHS orientation along unconventional $left < 1bar{1}0 right
Using the random matrix theory, we investigate the ensemble statistics of edge transport of a quantum spin Hall insulator with multiple edge states in the presence of quenched disorder. Dorokhov-Mello-Pereyra-Kumar equation applicable for such a syst