ﻻ يوجد ملخص باللغة العربية
A multi-band effective-mass Hamiltonian is derived for lattice-matched semiconductor nanostructures in a slowly varying external magnetic field. The theory is derived from the first-principles magnetic-field coupling Hamiltonian of Pickard and Mauri, which is applicable to nonlocal norm-conserving pseudopotentials in the local density approximation to density functional theory. The pseudopotential of the nanostructure is treated as a perturbation of a bulk reference crystal, with linear and quadratic response terms included in k.p perturbation theory. The resulting Hamiltonian contains several interface terms that have not been included in previous work on nanostructures in a magnetic field. The derivation provides the first direct analytical expressions showing how the coupling of the nonlocal potential to the magnetic field influences the effective magnetic dipole moment of the electron.
In this paper a multi-band envelope-function Hamiltonian for lattice-matched semiconductor heterostructures is derived from first-principles norm-conserving pseudopotentials. The theory is applicable to isovalent or heterovalent heterostructures with
We investigate the dynamic nuclear polarization from the hyperfine interaction between nonequilibrium electronic spins and nuclear spins coupled to them in semiconductor nanostructures. We derive the time and position dependence of the induced nuclea
Using first-principles density-functional theory calculations, we obtain the non-coplanar nodal loop for a single-component molecular conductor [Pd(dddt)$_2$] consisting of HOMO and LUMO with different parity. Focusing on two typical Dirac points, we
First-principles calculations, in combination with the four-state energy mapping method, are performed to extract the magnetic interaction parameters of multiferroic BiFeO$_3$. Such parameters include the symmetric exchange (SE) couplings and the Dzy
High Curie temperature of 900 K has been reported in Cr-doped AlN diluted magnetic semiconductors prepared by various methods, which is exciting for spintronic applications. It is believed that N defects play important roles in achieving the high tem