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A theoretical description of electronic Raman scattering from GaAs/Al_{x}Ga_{1-x}As artificial atoms under the influence of an external magnetic field is presented. Raman spectra with laser excitation energy in the interval E_{gap}-30 meV to E_{gap} are computed in the polarized and depolarized geometry. The polarization ratios for the collective and single-particle excitations indicate a breakdown of the Raman polarization selection rules once the magnetic field is switched on. A Raman intensity jump rule at the band gap is predicted in our calculations. This rule can be a useful tool for identifying the physical nature (charge or spin) of the electronic excitations in quantum dots in low magnetic fields.
We have undertaken a study of diluted magnetic semiconductors $Ga_{1-x}Mn_{x}N$ and $Ga_{1-x}Cr_{x}N$ with $x=0.0625, 0.125$, using the all electron linearized augmented plane wave method (LAPW) for different configurations of Mn as well as Cr. We st
Using polarization-resolved electronic Raman scattering we study under-doped, optimally-doped and over-doped Ba$_{1-x}$K$_{x}$Fe$_2$As$_2$ samples in the normal and superconducting states. We show that low-energy nematic fluctuations are universal fo
A nuclear magnetic resonance (NMR) study is reported of multiple (30) Al$_{0.13}$Ga$_{0.87}$As quantum well (QW) sample near the Landau level filling factor $ u =1$. In these Al$_{0.13}$Ga$_{0.87}$As QWs the effective $g$ factor is nearly zero. This
We investigate the optomechanical properties of tensile-strained ternary InGaP nanomembranes grown on GaAs. This material system combines the benefits of highly strained membranes based on stoichiometric silicon nitride, with the unique properties of
Polarization dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In th