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We investigate the electric field induced resistive switching effect and magnetic field induced fraction enlargement on a polycrystalline sample of a colossal magnetoresistive compound displaying intrinsic phase coexistence. Our data show that the electric effect (presumably related to the presence of inhomogeinities) is present in a broad temperature range(300 to 20 K), being observable even in a mostly homogeneous ferromagnetic state. In the temperature range in which low magnetic field determines the phase coexistence fraction, both effects, though related to different mechanisms, are found to determine multilevel nonvolatile memory capabilities simultaneously.
The inclination of the magnetic domain wall plane in electric field is observed. The simple theoretical model of this phenomenon that takes into account the spin flexoelectricity is proposed. The value of electric polarization of the magnetic domain
X-ray resonant magnetic scattering studies of rare earth magnetic ordering were performed on perovskite manganites RMnO3 (R = Dy, Gd) in an applied magnetic field. The data reveal that the field-induced three-fold polarization enhancement for H || a
We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable resistance change
Neutron diffraction is used to probe the (H,T) phase diagram of magneto-electric (ME) LiNiPO4 for magnetic fields along the c-axis. At zero field the Ni spins order in two antiferromagnetic phases. One has commensurate (C) structures and general orde
The metal-insulator transition (MIT) of BaVS3 is suppressed under pressure and above the critical pressure of p~2GPa the metallic phase is stabilized. We present the results of detailed magnetoresistivity measurements carried out at pressures near th