اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSpin symmetry and spin current of helicity eigenstates of the Luttinger Hamiltonian
59
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
A general spin symmetry argument is proposed for spin currents in semiconductors. In particular, due to the symmetry with respect to spin polarization of the helicity eigenstates of the Luttinger Hamiltonian for a hole-doped semiconductor, the spin polarized flux from a single helicity eigenstate induced by an external electric field, is canceled exactly when all such contributions from eigenstates that are degenerate in energy are summed. Thus, the net spin current predicted by Murakami et al, Science 301, 1348 (2003), cannot be produced by such a Hamiltonian. Possible symmetry breaking mechanisms which may generate a spin current are discussed.
قيم البحث
اقرأ أيضاً
Evidences of pure spin current are indistinguishable from those of many parasitic effects. Proper choices of materials and methods are essential for exploring pure spin current phenomena and devices.
Spin Hall effect, an electric generation of spin current, allows for efficient control of magnetization. Recent theory revealed that orbital Hall effect creates orbital current, which can be much larger than spin Hall-induced spin current. However, o
rbital current cannot directly exert a torque on a ferromagnet, requiring a conversion process from orbital current to spin current. Here, we report two effective methods of the conversion through spin-orbit coupling engineering, which allows us to unambiguously demonstrate orbital-current-induced spin torque, or orbital Hall torque. We find that orbital Hall torque is greatly enhanced by introducing either a rare-earth ferromagnet Gd or a Pt interfacial layer with strong spin-orbit coupling in Cr/ferromagnet structures, indicating that the orbital current generated in Cr is efficiently converted into spin current in the Gd or Pt layer. Furthermore, we show that the orbital Hall torque can facilitate the reduction of switching current of perpendicular magnetization in spin-orbit-torque-based spintronic devices.
The magnitude of spin-orbit torque (SOT), exerted to a ferromagnet (FM) from an adjacent heavy metal (HM), strongly depends on the amount of spin currents absorbed in the FM. We exploit the large spin absorption at the Ru interface to manipulate the
SOTs in HM/FM/Ru multilayers. While the FM thickness is smaller than its spin dephasing length of 1.2 nm, the top Ru layer largely boosts the absorption of spin currents into the FM layer and substantially enhances the strength of SOT acting on the FM. Spin-pumping experiments induced by ferromagnetic resonance support our conclusions that the observed increase in the SOT efficiency can be attributed to an enhancement of the spin-current absorption. A theoretical model that considers both reflected and transmitted mixing conductances at the two interfaces of FM is developed to explain the results.
It has been predicted that transverse spin current can propagate coherently (without dephasing) over a long distance in antiferromagnetically ordered metals. Here, we estimate the dephasing length of transverse spin current in ferrimagnetic CoGd allo
ys by spin pumping measurements across the compensation point. A modified drift-diffusion model, which accounts for spin-current transmission through the ferrimagnet, reveals that the dephasing length is about 4-5 times longer in nearly compensated CoGd than in ferromagnetic metals. This finding suggests that antiferromagnetic order can mitigate spin dephasing -- in a manner analogous to spin echo rephasing for nuclear and qubit spin systems -- even in structurally disordered alloys at room temperature. We also find evidence that transverse spin current interacts more strongly with the Co sublattice than the Gd sublattice. Our results provide fundamental insights into the interplay between spin current and antiferromagnetic order, which are crucial for engineering spin torque effects in ferrimagnetic and antiferromagnetic metals.
We analyze the experimentally obtained spin-current-related magnetoresistance in epitaxial Pt/Co bilayers by using a drift-diffusion model that incorporates both bulk spin Hall effect and interfacial Rashba-Edelstein effect (REE). The magnetoresistan
ce analysis yields, for the Pt/Co interface, a temperature-independent Rashba parameter in the order of 1e-11 eV m that agrees with theoretical calculations, along with an effective interfacial REE thickness of several angstroms which is in overall consistency with our previous spin-orbit torque analysis. In particular, our results suggest that both bulk and interface charge-spin current inter-
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
