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Surface diffusion has an impact on the lateral resolution of nanostructures in bottom-up atom nanofabrication. In this paper we study the effects of the gallium atoms self-assembled on silicon surfaces (100) patterned with trenches at different slopes. These particular substrate morphologies have been made to enable an effective deposition rate variation along the surface. In this way we experimentally mimic the effect of the atomic flux modulation created by standing wave during an atom nanofabrication experiment. Even if we observe self organization of gallium atoms on the surface, we conclude that the nano-islands are not affected by surface diffusion processes and the effective variation of the deposition rate per unit area is the dominant factor affecting the growth differences along the surface. This result demonstrates that the gallium atoms self-organization should not prevent the observation of a periodic nano-patterning created by atom nano-fabrication techniques.
Hybrid nanophotonics based on metal-dielectric nanostructures unifies the advantages of plasmonics and all-dielectric nanophotonics providing strong localization of light, magnetic optical response and specifically designed scattering properties. Her
Despite decades of research, the ultimate goal of nanotechnology--top-down manipulation of individual atoms--has been directly achieved with only one technique: scanning probe microscopy. In this Review, we demonstrate that scanning transmission elec
This paper addresses the structural characterisation of a series of U/Fe, U/Co and U/Gd multilayers. X-ray reflectivity has been employed to investigate the layer thickness and roughness parameters along the growth direction and high-angle diffractio
We have studied the magnetic reversal of L-shaped nanostructures fabricated from (Ga,Mn)As. The strain relaxation due to the lithographic patterning results in each arm having a uniaxial magnetic anisotropy. Our analysis confirms that the magnetic re
The monolayer Gallium sulfide (GaS) was demonstrated as a promising two-dimensional semiconductor material with considerable band gaps. The present work investigates the band gap modulation of GaS monolayer under biaxial or uniaxial strain by using D