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Magnetic junction is considered which consists of two ferromagnetic metal layers, a thin nonmagnetic spacer in between, and nonmagnetic lead. Theory is developed of a magnetization reversal due to spin injection in the junction. Spin-polarized current is perpendicular to the interfaces. One of the ferromagnetic layers has pinned spins and the other has free spins. The current breaks spin equilibrium in the free spin layer due to spin injection or extraction. The nonequilibrium spins interact with the lattice magnetic moment via the effective s-d exchange field, which is current dependent. Above a certain current density threshold, the interaction leads to a magnetization reversal. Two threshold currents are found, which are reached as the current increases or decreases, respectively, so that a current hysteresis takes place. The theoretical results are in accordance with the experiments on magnetization reversal by current in three-layer junctions Co/Cu/Co prepared in a pillar form.
Exchange-coupled structures consisting of ferromagnetic and ferrimagnetic layers become technologically more and more important. We show experimentally the occurrence of completely reversible, hysteresis-free minor loops of [Co(0.2 nm)/Ni(0.4 nm)/Pt(
A mesoscopic description of spin-transfer effect is proposed, based on the spin-injection mechanism occurring at the junction with a ferromagnet. The effect of spin-injection is to modify locally, in the ferromagnetic configuration space, the density
A new mathematical model of hysteresis loop has been derived. Model consists in an extansion of tanh($cdot$) by extanding the base of exp function into an arbitrary positive number. The presented model is self-similar and invariant with respect to sc
Spin-current injection into an organic semiconductor $rm{kappatext{-}(BEDTtext{-}TTF)_2Cu[N(CN)_2]Br}$ film induced by the spin pumping from an yttrium iron garnet (YIG) film. When magnetization dynamics in the YIG film is excited by ferromagnetic or
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be