Wurtzite (Ga,Mn)N films showing ferromagnetic behaviour at room temperature were successfully grown on sapphire(0001) substrates by molecular beam epitaxy using ammonia as nitrogen source. Magnetization measurements were carried out by a superconducting quantum interference device at the temperatures between 1.8K and 300K with magnetic field applied parallel to the film plane up to 7T. The magnetic-field dependence of magnetization of a (Ga,Mn)N film at 300K were ferromagnetic, while a GaN film showed Pauli paramagnetism like behaviour. The Curie temperatures of a (Ga,Mn)N film was estimated as 940K.
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