ﻻ يوجد ملخص باللغة العربية
Complementary angle-resolved photoemission and bulk-sensitive k-resolved resonant inelastic x-ray scattering of divalent hexaborides reveal a >1 eV X-point gap between the valence and conduction bands, in contradiction to the band overlap assumed in several models of their novel ferromagnetism. This semiconducting gap implies that carriers detected in transport measurements arise from defects, and the measured location of the bulk Fermi level at the bottom of the conduction band implicates boron vacancies as the origin of the excess electrons. The measured band structure and X-point gap in CaB_6 additionally provide a stringent test case for proper inclusion of many-body effects in quasi-particle band calculations.
Boron K-edge soft x-ray emission and absorption are used to address the fundamental question of whether divalent hexaborides are intrinsic semimetals or defect-doped bandgap insulators. These bulk sensitive measurements, complementary and consistent
This paper has been withdrawn by the authors due to new theoretical evidence and experimental proof that the semiconducting bandgap reported in this paper and ascribed to a surface region is in fact a bulk property of divalent hexaborides. As reporte
We present a study of resonant inelastic X-ray scattering (RIXS) spectra collected at the rare-earth $L$ edges of divalent hexaborides YbB$_6$ and EuB$_6$. In both systems, RIXS-active features are observed at two distinct resonances separated by $si
For the first time, a group of CaB6-typed cubic rare earth high-entropy hexaborides have been successfully fabricated into dense bulk pellets (>98.5% in relative densities). The specimens are prepared from elemental precursors via in-situ metal-boron
In rare-earth cage compounds, the guest 4f ion cannot be considered as fixed at the centre of its cage. As result of the electronic degeneracy of the 4f shell, single-ion or collective mechanisms can redistribute the ion inside the cage, which can be