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We present a method for fabricating Josephson junctions and superconducting quantum interference devices (SQUIDs) which is based on the local anodization of niobium strip lines 3 to 6.5 nm-thick under the voltage-biased tip of an Atomic Force Microscope. Microbridge junctions and SQUID loops are obtained either by partial or total oxidation of the niobium layer. Two types of weak link geometries are fabricated : lateral constriction (Dayem bridges) and variable thickness bridges. SQUIDs based on both geometries show a modulation of the maximum Josephson current with a magnetic flux periodic with respect to the superconducting flux quantum h/2e. They persist up to 4K. The modulation shape and depth for SQUIDs based on variable thickness bridges indicate that the weak link size becomes comparable to the superconducting film coherence length which is of the order of 10nm.
We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) made of Sb-doped Bi2Se3 topological insulator (TI) nanoribbon (NR) contacted with PbIn superconducting electrodes. When an external magnetic field
The magneto-electrostatic tailoring of the supercurrent in quantum point contact ballistic Josephson junctions is demonstrated. An etched InAs-based heterostructure is laterally contacted to superconducting niobium leads and the existence of two etch
We recently presented the first superconducting quantum interference device (SQUID) with single-walled carbon nanotube (CNT) Josephson junctions [1: J. P. Cleuziou, W. Wernsdorfer, V. Bouchiat, T. Ondarcuhu and M. Monthioux, Nature Nanotech. 1, 53, (
We present a fabrication method of superconducting quantum interference devices (SQUIDs) based on direct write lithography with an Atomic Force Microscope (AFM). This technique involves maskless local anodization of Nb or NbN ultrathin films using th
The critical current response to an applied out-of-plane magnetic field in a Josephson junction provides insight into the uniformity of its current distribution. In Josephson junctions with semiconducting weak links, the carrier density and, therefor