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We report on the observation of photoluminescence from positive, neutral and negative charge states of single semiconductor quantum dots. For this purpose we designed a structure enabling optical injection of a controlled unequal number of negative electrons and positive holes into an isolated InGaAs quantum dot embedded in a GaAs matrix. Thereby, we optically produced the charge states -3, -2, -1, 0, +1 and +2. The injected carriers form confined collective artificial atoms and molecules states in the quantum dot. We resolve spectrally and temporally the photoluminescence from an optically excited quantum dot and use it to identify collective states, which contain charge of one type, coupled to few charges of the other type. These states can be viewed as the artificial analog of charged atoms such as H$^{-}$, H$^{-2}$, H$^{-3}$, and charged molecules such as H$_{2}^{+}$ and H$_{3}^{+2}$. Unlike higher dimensionality systems, where negative or positive charging always results in reduction of the emission energy due to electron-hole pair recombination, in our dots, negative charging reduces the emission energy, relative to the charge-neutral case, while positive charging increases it. Pseudopotential model calculations reveal that the enhanced spatial localization of the hole-wavefunction, relative to that of the electron in these dots, is the reason for this effect.
We present a comprehensive study of the optical transitions and selection rules of variably charged single self-assembled InAs/GaAs quantum dots. We apply high resolution polarization sensitive photoluminescence excitation spectroscopy to the same qu
We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the charge from positive to neutral to negative using a Schottky diode. We observe that photoluminescence polarization memory has the same
We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs around 1550
In order to employ solid state quantum dots as qubits, both a high degree of control over the confinement potential as well as sensitive charge detection are essential. We demonstrate that by combining local anodic oxidation with local Schottky-gates
We have performed detailed photoluminescence (PL) and absorption spectroscopy on the same single self-assembled quantum dot in a charge-tunable device. The transition from neutral to charged exciton in the PL occurs at a more negative voltage than th