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Interest in magnetic-tunnel junctions has prompted a re-examination of tunneling measurements through thin insulating films. In any study of metal-insulator-metal trilayers, one tries to eliminate the possibility of pinholes (small areas over which the thickness of the insulator goes to zero so that the upper and lower metals of the trilayer make direct contact). Recently, we have presented experimental evidence that ferromagnet-insulator-normal trilayers that appear from current-voltage plots to be pinhole-free may nonetheless in some cases harbor pinholes. Here, we show how pinholes may arise in a simple but realistic model of film deposition and that purely classical conduction through pinholes may mimic one aspect of tunneling, the exponential decay in current with insulating thickness.
Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier showed reprodu
A simple, reliable method for preparation of bulk Cr tips for Scanning Tunneling Microscopy (STM) is proposed and its potentialities in performing high-quality and high-resolution STM and Spin Polarized-STM (SP-STM) are investigated. Cr tips show ato
This review covers recent achievements in the studies of quantum properties of the novel carbon materials (fullerite C60 and bundles of single-walled nanotubes (SWNT)) saturated with such light-mass species as helium isotopes, the homonuclear molecul
We report a detailed study of tunneling spectra measured on 2H-Ta$_x$Nb$_{1-x}$Se$_2$ ($x=0sim 0.1$) single crystals using a low-temperature scanning tunneling microscope. The prominent gap-like feature unintelligible for a long time was found to be
Multiple Indicators Multiple Causes (MIMIC) models are type of structural equation models, a theory-based approach to confirm the influence of a set of exogenous causal variables on the latent variable, and also the effect of the latent variable on o