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We present a study on the lifting of degeneracy of the size-quantized energy levels in an electrostatically defined quantum point contact in bilayer graphene by the application of in-plane magnetic fields. We observe a Zeeman spin splitting of the first three subbands, characterized by effective Land{e} $g$-factors that are enhanced by confinement and interactions. In the gate-voltage dependence of the conductance, a shoulder-like feature below the lowest subband appears, which we identify as a $0.7$ anomaly stemming from the interaction-induced lifting of the band degeneracy. We employ a phenomenological model of the $0.7$ anomaly to the gate-defined channel in bilayer graphene subject to in-plane magnetic field. Based on the qualitative theoretical predictions for the conductance evolution with increasing magnetic field, we conclude that the assumption of an effective spontaneous spin splitting is capable of describing our observations, while the valley degree of freedom remains degenerate.
We report a study of one-dimensional subband splitting in a bilayer graphene quantum point contact in which quantized conductance in steps of $4,e^2/h$ is clearly defined down to the lowest subband. While our source-drain bias spectroscopy measuremen
We measure the renormalized effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we control their distribution between two spin and two valley subbands. We observe a marked contrast between the spin and
We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carr
In this study, we observe that the conductance of a quantum point contact on a GaAs/AlGaAs double quantum well depends significantly on the magnetic field perpendicular to the two-dimensional electron gas. In the presence of the magnetic field, the s
Understanding how the electron spin is coupled to orbital degrees of freedom, such as a valley degree of freedom in solid-state systems is central to applications in spin-based electronics and quantum computation. Recent developments in the preparati