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We have numerically solved the Landau-Lifshitz-Gilbert (LLG) equation in its standard and inertial forms to study the magnetization switching dynamics in a $3d$ thin film ferromagnet. The dynamics is triggered by ultrashort magnetic field pulses of varying width and amplitude in the picosecond and Tesla range. We have compared the solutions of the two equations in terms of switching characteristic, speed and energy analysis. Both equations return qualitatively similar switching dynamics, characterized by regions of slower precessional behavior and faster ballistic motion. In case of inertial dynamics, ballistic switching is found in a 25 % wider region in the parameter space given by the magnetic field amplitude and width. The energy analysis of the dynamics is qualitatively different for the standard and inertial LLG equations. In the latter case, an extra energy channel, interpreted as the kinetic energy of the system, is available. Such extra channel is responsible for a resonant energy absorption at THz frequencies, consistent with the occurence of spin nutation.
The dynamical equation of the magnetization has been reconsidered with enlarging the phase space of the ferromagnetic degrees of freedom to the angular momentum. The generalized Landau-Lifshitz-Gilbert equation that includes inertial terms, and the c
The gyromagnetic relation - i.e. the proportionality between the angular momentum $vec L$ (defined by an inertial tensor) and the magnetization $vec M$ - is evidence of the intimate connections between the magnetic properties and the inertial propert
We investigate in details the inertial dynamics of a uniform magnetization in the ferromagnetic resonance (FMR) context. Analytical predictions and numerical simulations of the complete equations within the Inertial Landau-Lifshitz-Gilbert (ILLG) mod
Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device geometries . Here
Efficient control of a magnetization without an application of the external magnetic fields is the ultimate goal of spintronics. We demonstrate, that in monolayers of $text{CrI}_3$, magnetization can be switched all optically, by application of the r