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We study a doped transition metal dichalcogenide monolayer in an optical microcavity. Using the microscopic theory, we simulate spectra of quasiparticles emerging due to the interaction of material excitations and a high-finesse optical mode, providing a comprehensive analysis of optical spectra as a function of Fermi energy and predicting several modes in the strong light-matter coupling regime. In addition to the exciton-polaritons and trion-polaritons, we report additional polaritonic modes that become bright due to the interaction of excitons with free carriers. At large doping, we reveal strongly coupled modes reminiscent of higher-order trion modes that hybridize with a cavity mode. We also demonstrate that rising the carrier concentration enables to change the nature of the systems ground state from the dark to the bright one. Our results offer a unified description of polaritonic modes in a wide range of free electron densities.
Charged excitons (trions) are essential for the optical spectra in low dimensional doped monolayers (ML) of transitional metal dichalcogenides (TMDC). Using a direct diagonalization of the three-body Hamiltonian, we explore the low-lying trion states
Due to a strong Coulomb interaction, excitons dominate the excitation kinetics in 2D materials. While Coulomb-scattering between electrons has been well studied, the interaction of excitons is more challenging and remains to be explored. As neutral c
Exciton optical transitions in transition-metal dichalcogenides offer unique opportunities to study rich many-body physics. Recent experiments in monolayer WSe$_2$ and WS$_2$ have shown that while the low-temperature photoluminescence from neutral ex
We present a three-band tight-binding (TB) model for describing the low-energy physics in monolayers of group-VIB transition metal dichalcogenides $MX_2$ ($M$=Mo, W; $X$=S, Se, Te). As the conduction and valence band edges are predominantly contribut
Doped transition-metal dichalcogenides monolayers exhibit exciting magnetic properties for the benefit of two-dimensional spintronic devices. Using density functional theory (DFT) incorporating Hubbard-type of correction (DFT$+U$) to account for the