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We collect values of selected performance characteristics of semiconductor spin qubits defined in electrically controlled nanostructures. The characteristics are envisioned to serve as a community source for the values of figures of merit with agreed-on definitions allowing comparison of different qubit platforms. We include characteristics on the qubit coherence, speed, fidelity, and the qubit-size of multi-qubit devices. The review focuses on collecting the values of these characteristics as reported in the literature, rather than on the details of their definitions or significance. The core of the review are thus tables and figures.
We have observed an unusual dc current spontaneously generated in the conducting channel of a short-gated GaAs transistor. The magnitude and direction of this current critically depend upon the voltage applied to the gate. We propose that it is initi
We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated quantum do
Two basic physical models, a two-level system and a harmonic oscillator, are realized on the mesoscopic scale as coupled qubit and resonator. The realistic system includes moreover the electronics for controlling the distance between the qubit energy
The understanding and calculation of spin transport are essential elements for the development of spintronics devices. Here, we propose a simple method to calculate analytically the spin accumulations, spin currents and magnetoresistances in complex
Electrically-conducting diamond is a promising candidate for next-generation electronic, thermal and electrochemical applications. One of the major obstacles towards its exploitation is the strong degradation that some of its key physical properties