ترغب بنشر مسار تعليمي؟ اضغط هنا

Structural modulation in potassium birnessite single crystals

114   0   0.0 ( 0 )
 نشر من قبل Liliia Kulish
 تاريخ النشر 2021
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We report on the growth of single-crystal potassium birnessite (K0.31MnO2*0.41H2O) and present both the average and local structural characterization of this frustrated magnetic system. Single crystals were obtained employing a flux growth method with a KNO3/B2O3 flux at 700 {deg}C. Single-crystal X-ray diffraction revealed an average orthorhombic symmetry, with space group Cmcm. A combination of high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) with atomic resolution energy dispersive X-ray spectroscopy (EDS) demonstrated the layered structure of potassium birnessite with manganese-containing planes well separated by layers of potassium atoms. MnO6 octahedra and the K/H2O planes were clearly imaged via integrated differential phase contrast (iDPC) STEM. Furthermore, iDPC-STEM also revealed the existence of local domains with alternating contrast of the manganese oxide planes, most likely originating from charge ordering of Mn3+ and Mn4+ along the c-axis. These charge-ordered domains are clearly correlated with a reduction in the c-lattice parameter compared to the rest of the matrix. The insight gained from this work allows for a better understanding of the correlation between structure and magnetic properties.



قيم البحث

اقرأ أيضاً

149 - S. L. Budko , S. Nandi , N. Ni 2009
We present thermodynamic, structural and transport measurements on Ba(Fe0.973Cr0.027)2As2 single crystals. All measurements reveal sharp anomalies at ~ 112 K. Single crystal x-ray diffraction identifies the structural transition as a first order, fro m the high-temperature tetragonal I4/mmm to the low-temperature orthorhombic Fmmm structure, in contrast to an earlier report.
120 - Erin Jedlicka 2021
We study the effects of bismuth doping on the crystal structure and phase transitions in single crystals of the perovskite semiconductor methylammonium lead tribromide, MAPbBr3. By measuring temperature-dependent specific heat capacity (Cp) we find t hat, as Bi doping increases, the phase transition assigned to the cubic to tetragonal phase boundary decreases in temperature. Furthermore, after doping we observe one phase transition between 135 and 155 K, in contrast to two transitions observed in the undoped single crystal. These results appear strikingly similar to previously reported effects of mechanical pressure on perovskite crystal structure. Using X-ray diffraction, we show that the lattice constant decreases as Bi is incorporated into the crystal, as predicted by density functional theory (DFT). We propose that bismuth substitutional doping on the lead site is dominant, resulting in BiPb+ centers which induce compressive chemical strain that alters the crystalline phase transitions.
Using first-principles density functional theory calculations, we investigate a family of stable two-dimensional crystals with chemical formula $A_2B_2$, where $A$ and $B$ belong to groups IV and V, respectively ($A$ = C, Si, Ge, Sn, Pb; $B$ = N, P, As, Sb, Bi). Two structural symmetries of hexagonal lattices $Pbar{6}m2$ and $Pbar{3}m1$ are shown to be dynamically stable, named as $alpha$- and $beta$-phases correspondingly. Both phases have similar cohesive energies, and the $alpha$-phase is found to be energetically favorable for structures except CP, CAs, CSb and CBi, for which the $beta$-phase is favored. The effects of spin-orbit coupling and Hartree-Fock corrections to exchange-correlation are included to elucidate the electronic structures. All structures are semiconductors except CBi and PbN, which have metallic character. SiBi, GeBi and SnBi have direct band gaps, whereas the remaining semiconductor structures have indirect band gaps. All structures have quartic dispersion in their valence bands, some of which make the valence band maximum and resemble a Mexican hat shape. SnAs and PbAs have purely quartic valence band edges, i.e. $E{sim}{-}alpha k^4$, a property reported for the first time. The predicted materials are candidates for a variety of applications. Owing to their wide band gaps, CP, SiN, SiP, SiAs, GeN, GeP can find their applications in optoelectronics. The relative band positions qualify a number of the structures as suitable for water splitting, where CN and SiAs are favorable at all pH values. Structures with quartic band edges are expected to be efficient for thermoelectric applications.
The paper describes heterostructures spontaneously formed in PMN-PT single crystals cooled under bias electric field applied along [001]pc and then zero-field-heated in the vicinity of the so-called depoling temperature. In particular, formation of l amellar structures composed of tetragonal-like and rhombohedral-like layers extending over macroscopic (mm) lengths is demonstrated by optical observations and polarized Raman investigations.
The metallic character of the GeBi2Te4 single crystals is probed using a combination of structural and physical properties measurements, together with density functional theory (DFT) calculations. The structural study shows distorted Ge coordination polyhedra, mainly of the Ge octahedra. This has a major impact on the band structure, resulting in bulk metallic behavior of GeBi2Te4, as indicated by DFT calculations. Such calculations place GeBi2Te4 in a class of a few known non-trivial topological metals, and explains why an observed Dirac point lies below the Fermi energy at about -0.12eV. A topological picture of GeBi2Te4 is confirmed by the observation of surface state modulations by scanning tunneling microscopy (STM).
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا