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تسجيل مستخدم جديدTheory of Valley Polarized Quantum Anomalous Hall State in Moire MoTe$_2$/WSe$_2$ Heterobilayers
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Moire heterobilayer transition metal dichalcogenides (TMDs) emerge as an ideal system for simulating the single-band Hubbard model and interesting correlated phases have been observed in these systems. Nevertheless, the moire bands in heterobilayer TMDs were believed to be topologically trivial. Recently, it was reported that both a quantum valley Hall insulating state at filling $ u=2$ (two holes per moire unit cell) and a valley polarized quantum anomalous Hall state at filling $ u=1$ were observed in AB stacked moire MoTe$_2$/WSe$_2$ heterobilayers. However, how the topologically nontrivial states emerge is not known. In this work, we propose that the pseudo-magnetic fields induced by lattice relaxation in moire MoTe$_2$/WSe$_2$ heterobilayers could naturally give rise to moire bands with finite Chern numbers. We show that a time-reversal invariant quantum valley Hall insulator is formed at full-filing $ u=2$, when two moire bands with opposite Chern numbers are filled. At half-filling $ u=1$, Coulomb interaction lifts the valley degeneracy and results in a valley polarized quantum anomalous Hall state, as observed in the experiment. Our theory identifies a new way to achieve topologically non-trivial states in heterobilayer TMD materials.
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The creation of moire patterns in crystalline solids is a powerful approach to manipulate their electronic properties, which are fundamentally influenced by periodic potential landscapes. In 2D materials, a moire pattern with a superlattice potential
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