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Interlayer valley excitons in bilayer MoS2 feature concurrently large oscillator strength and long lifetime, and hence represent an advantageous scenario for valleytronic applications. However, control of valley pseudospin of interlayer excitons in pristine bilayer MoS2, which lies at the heart of valleytronics, has remained elusive. Here we report the observation of highly circularly polarized photoluminescence from interlayer excitons of bilayer MoS2 with both optical and magnetic addressability. Under excitation of circularly polarized light near exciton resonance, interlayer excitons of bilayer MoS2 show a near-unity, but negative circular polarization. Significantly, by breaking time-reversal symmetry with an out-of-plane magnetic field, a record level of spontaneous valley polarization (7.7%/Tesla) is identified for interlayer excitons in bilayer MoS2. The giant valley polarization of the interlayer excitons in bilayer MoS2, together with the feasibility of electrical/optical/magnetic control and strong oscillator strength, provides a firm basis for the development of next-generation electronic and optoelectronic applications.
Coulomb bound electron-hole pairs, excitons, govern the optical properties of semi-conducting transition metal dichalcogenides like MoS$_2$ and WSe$_2$. We study optical transitions at the K-point for 2H homobilayer MoS$_2$ in Density Functional Theo
Van der Waals heterostructures provide a rich platform for emergent physics due to their tunable hybridization of electronic orbital- and spin-degrees of freedom. Here, we show that a heterostructure formed by twisted bilayer graphene sandwiched betw
We present in-depth measurements of the electronic band structure of the transition-metal dichalcogenides (TMDs) MoS2 and WS2 using angle-resolved photoemission spectroscopy, with focus on the energy splittings in their valence bands at the K point o
Two-dimensional (2D) materials, such as graphene1, boron nitride2, and transition metal dichalcogenides (TMDs)3-5, have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D monolayers can
Single-layer transition metal dichalcogenides (TMDs) provide a promising material system to explore the electrons valley degree of freedom as a quantum information carrier. The valley degree of freedom in single-layer TMDs can be directly accessed by