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Energy-efficient programmable photonic integrated circuits (PICs) are the cornerstone of on-chip classical and quantum optical technologies. Optical phase shifters constitute the fundamental building blocks which enable these programmable PICs. Thus far, carrier modulation and thermo-optical effect are the chosen phenomena for ultrafast and low-loss phase shifters, respectively; however, the state and information they carry are lost once the power is turned off-they are volatile. The volatility not only compromises energy efficiency due to their demand for constant power supply, but also precludes them from emerging applications such as in-memory computing. To circumvent this limitation, we introduce a novel phase shifting mechanism that exploits the nonvolatile refractive index modulation upon structural phase transition of Sb$_{2}$Se$_{3}$, an ultralow-loss phase change material. A zero-static power and electrically-driven phase shifter was realized on a foundry-processed silicon-on-insulator platform, featuring record phase modulation up to 0.09 $pi$/$mu$m and a low insertion loss of 0.3 dB/$pi$. We further pioneered a one-step partial amorphization scheme to enhance the speed and energy efficiency of PCM devices. A diverse cohort of programmable photonic devices were demonstrated based on the ultracompact PCM phase shifter.
Optical phase change materials (O-PCMs), a unique group of materials featuring drastic optical property contrast upon solid-state phase transition, have found widespread adoption in photonic switches and routers, reconfigurable meta-optics, reflectiv
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