اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدCo-existence of Topological Non-trivial and Spin Gapless Semiconducting Behavior in MnPO$_4$: A Composite Quantum Compound
74
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Composite quantum compounds (CQC) are classic example of quantum materials which host more than one apparently distinct quantum phenomenon in physics. Magnetism, topological superconductivity, Rashba physics etc. are few such quantum phenomenon which are ubiquitously observed in several functional materials and can co-exist in CQCs. In this letter, we use {it ab-initio} calculations to predict the co-existence of two incompatible phenomena, namely topologically non-trivial Weyl semimetal and spin gapless semiconducting (SGS) behavior, in a single crystalline system. SGS belong to a special class of spintronics material which exhibit a unique band structure involving a semiconducting state for one spin channel and a gapless state for the other. We report such a SGS behavior in conjunction with the topologically non-trivial multi-Weyl Fermions in MnPO$_4$. Interestingly, these Weyl nodes are located very close to the Fermi level with the minimal trivial band density. A drumhead like surface state originating from a nodal loop around Y-point in the Brillouin zone is observed. A large value of the simulated anomalous Hall conductivity (1265 $Omega^{-1} cm^{-1}$) indirectly reflects the topological non-trivial behavior of this compound. Such co-existent quantum phenomena are not common in condensed matter systems and hence it opens up a fertile ground to explore and achieve newer functional materials.
قيم البحث
اقرأ أيضاً
Spin gapless semiconductors (SGS) form a new class of magnetic semiconductors, which has a band gap for one spin sub band and zero band gap for the other, and thus are useful for tunable spin transport based applications. In this paper, we report the
first experimental evidence for spin gapless semiconducting behavior in CoFeMnSi Heusler alloy. Such a behavior is also confirmed by first principles band structure calculations. The most stable configuration obtained by the theoretical calculation is verified by experiment. The alloy is found to crystallize in the cubic Heusler structure (LiMgPdSn type) with some amount of disorder and has a saturation magnetization of 3.7 Bohrs magneton/f.u.. and Curie temperature of 620 K. The saturation magnetization is found to follow the Slater-Pauling behavior, one of the prerequisites for SGS. Nearly temperature-independent carrier concentration and electrical conductivity is observed from 5 to 300 K. An anomalous Hall coefficient of 162 S/cm is obtained at 5 K. Point contact Andreev reflection data has yielded the current spin polarization value of 0.64, which is found to be robust against the structural disorder. All these properties are quite promising for the spintronic applications such as spin injection and can bridge a gap between the contrasting behavior of half-metallic ferromagnets and semiconductors.
The BaAl$_4$ prototype crystal structure is the most populous of all structure types, and is the building block for a diverse set of sub-structures including the famous ThCr$_2$Si$_2$ family that hosts high-temperature superconductivity and numerous
magnetic and strongly correlated electron systems. The MA$_4$ family of materials (M=Sr, Ba, Eu; A=Al, Ga, In) themselves present an intriguing set of ground states including charge and spin orders, but have largely been considered as uninteresting metals. Using electronic structure calculations, symmetry analysis and topological quantum chemistry techniques, we predict the exemplary compound BaAl$_4$ to harbor a three-dimensional Dirac spectrum with non-trivial topology and possible nodal lines crossing the Brillouin zone, wherein one pair of semi-Dirac points with linear dispersion along the $k_z$ direction and quadratic dispersion along the $k_x/k_y$ direction resides on the rotational axis with $C_{4v}$ point group symmetry. Electrical transport measurements reveal the presence of an extremely large, unsaturating positive magnetoresistance in BaAl$_4$ despite an uncompensated band structure, and quantum oscillations and angle-resolved photoemission spectroscopy measurements confirm the predicted multiband semimetal structure with pockets of Dirac holes and a Van Hove singularity (VHS) remarkably consistent with the theoretical prediction. We thus present BaAl$_4$ as a new topological semimetal, casting its prototype status into a new role as building block for a vast array of new topological materials.
Surface magnetism and its correlation with the electronic structure are critical to understand the gapless topological surface state in the intrinsic magnetic topological insulator MnBi$_2$Te$_4$. Here, using static and time resolved angle-resolved p
hotoemission spectroscopy (ARPES), we find a significant ARPES intensity change together with a gap opening on a Rashba-like conduction band. Comparison with a model simulation strongly indicates that the surface magnetism on cleaved MnBi$_2$Te$_4$ is the same as its bulk state. The coexistence of surface ferromagnetism and a gapless TSS uncovers the novel complexity of MnBi$_2$Te$_4$ that may be responsible for the low quantum anomalous Hall temperature of exfoliated MnBi$_2$Te$_4$.
As the bulk single-crystal MoN2/ReN2 with a layered structure was successfully synthesized in experiment, transition-metal dinitrides have attracted considerable attention in recent years. Here, we focus on rare-earth-metal (Rem) elements and propose
seven stable Rem dinitride monolayers with a 1T structure, namely 1T-RemN2. These monolayers have a ferromagnetic ground state with in-plane magnetization. Without spin-orbit coupling (SOC) effect, the band structures are spin-polarized with Dirac points at the Fermi level. Remarkably, the 1T-LuN2 monolayer shows an isotropic magnetic anisotropy energy in the xy-plane with in-plane magnetization, indicating easy tunability of the magnetization direction. When rotating the magnetization vector in the xy-plane, our proposed model can accurately describe the variety of the SOC band gap and two topological states (Weyl-like semimetal and Chern insulator states) appear with tunable properties. The Weyl-like semimetal state is a critical point between the two Chern insulator states with opposite sign of the Chern numbers. The large nontrivial band gap (up to 60.3 meV) and the Weyl-like semimetal state are promising for applications in spintronic devices.
The diamond and zinc-blende semiconductors are well-known and have been widely studied for decades. Yet, their electronic structure still surprises with unexpected topological properties of the valence bands. In this joint theoretical and experimenta
l investigation we demonstrate for the benchmark compounds InSb and GaAs that the electronic structure features topological surface states below the Fermi energy. Our parity analysis shows that the spin-orbit split-off band near the valence band maximum exhibits a strong topologically non-trivial behavior characterized by the $mathcal{Z}_2$ invariants $(1;000)$. The non-trivial character emerges instantaneously with non-zero spin-orbit coupling, in contrast to the conventional topological phase transition mechanism. textit{Ab initio}-based tight-binding calculations resolve topological surface states in the occupied electronic structure of InSb and GaAs, further confirmed experimentally by soft X-ray angle-resolved photoemission from both materials. Our findings are valid for all other materials whose valence bands are adiabatically linked to those of InSb, i.e., many diamond and zinc-blende semiconductors, as well as other related materials, such as half-Heusler compounds.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
