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Using the method developed in a recent paper (Euro. Phys. J. B 92.8 (2019): 1-28) we consider $1/f$ noise in two-dimensional electron gas (2DEG). The electron coherence length of the system is considered as a basic parameter for discretizing the space, inside which the dynamics of electrons is described by quantum mechanics, while for length scales much larger than it the dynamics is semi-classical. For our model, which is based on the Thomas-Fermi-Dirac approximation, there are two control parameters: temperature $T$ and the disorder strength ($Delta$). Our Monte Carlo studies show that the system exhibits $1/f$ noise related to the electronic avalanche size, which can serve as a model for describing the experimentally observed flicker noise in 2DEG. The power spectrum of our model scales with frequency with an exponent in the interval $0.3<alpha_{PS}<0.6$. We numerically show that the electronic avalanches are scale-invariant with power-law behaviors in and out of the metal-insulator transition line.
High-mobility 2D electron systems in a perpendicular magnetic field exhibit zero resistance states (ZRS) when driven with microwave radiation. We study the nonequilibrium phase transition into this ZRS using phenomenological equations of motion to de
In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe t
We designed and performed low temperature DC transport characterization studies on two-dimensional electron gases confined in lattice-matched In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells grown by molecular beam epitaxy on InP subst
Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beams injection energy, and distance from the injection point. At low injection energies, we find
We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of Al0.1In0.9Sb com