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Atom-by-atom assembly of functional materials and devices is perceived as one of the ultimate targets of nanoscience and nanotechnology. While traditionally implemented via scanning probe microscopy techniques, recently it has been shown that the beam of a scanning transmission electron microscope can be used for targeted manipulation of individual atoms. However, the process is highly dynamic in nature and proceeds via a large number of weakly-understood individual steps. Hence, harnessing an electron beam towards atomic assembly requires automated methods to control the parameters and positioning of the beam in such a way as to fabricate atomic-scale structures reliably. Here, we create a molecular dynamics environment wherein individual atom velocities can be modified, effectively simulating a beam-induced interaction, and apply reinforcement learning to model construction of specific atomic units consisting of Si dopant atoms on a graphene lattice. We find that it is possible to engineer the reward function of the agent in such a way as to encourage formation of local clusters of dopants, whilst at the same time minimizing the amplitude of momentum changes. Inspection of the learned policies indicates that of fundamental importance is the component of velocity perpendicular to the material plane, and further, that the high stochasticity of the environment leads to conservative policies. This study shows the potential for reinforcement learning agents trained in simulated environments for potential use as atomic scale fabricators, and further, that the dynamics learned by agents encode specific elements of important physics that can be learned.
Superconducting nanowires can be fabricated by decomposition of an organometallic gas using a focused beam of Ga ions. However, physical damage and unintentional doping often results from the exposure to the ion beam, motivating the search for a mean
Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Current models of EBIC assume that excitations in the $p$-$n$ junction depletion regio
We propose a mechanism of energy relaxation for carriers confined in a non-polar quantum dot surrounded by an amorphous polar environment. The carrier transitions are due to their interaction with the oscillating electric field induced by the local v
Fe-Si binary compounds have been fabricated by focused electron beam induced deposition by the alternating use of iron pentacarbonyl, Fe(CO)5, and neopentasilane, Si5H12 as precursor gases. The fabrication procedure consisted in preparing multilayer
In the majority of cases nanostructures prepared by focused electron beam induced deposition (FEBID) employing an organometallic precursor contain predominantly carbon-based ligand dissociation products. This is unfortunate with regard to using this