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The experiment of the future electron-positron colliders has unprecedented requirements on the vertex resolution, such as around 3micron single point resolution for the inner most detector layer, with fast readout, and very low power-consumption density and material budget. Significant efforts have been put into the development of monolithic silicon pixel sensors, but there have been some challenges to combine all those stringent specifications in a small pixel area. This paper presents a compact prototype pixel sensor fabricated in LAPIS 200nm SOI process and focuses on the characterization of low capacitance of the sensing node with a pinned depleted diode structure adopting a novel method of forward bias voltage and AC coupling on the diode. Three PDD structures with 16 micron by 20 micron pixel size were designed and compared using radioactive sources and injected charge. The measured result shows that the designed PDD structure has very low leakage current and around 3.5fF of equivalent input capacitance.
X-ray SOI pixel sensors, XRPIX, are being developed for the next-generation X-ray astronomical satellite, FORCE. The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity
We have been developing a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an upper part
We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called XRPIX, for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology, and is equi
SOI (Silicon-On-Insulator) pixel sensor is promising technology for developing the high position resolution detector by integrating the small pixels and circuits in the monolithic way. The event driven (trigger mode) SOI based pixel sensor has also b
An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silico