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The origin of the second order phase transition at 328K in Ta$_2$NiSe$_5$, a prominent candidate for direct gap excitonic insulator, remains under fervent debate. The driving force for the transition can be revealed by identification of the soft modes origin that may be deducted from polarization resolved Raman scattering experiments. Such studies were recently reported in [arXiv:2007.07344 (2020)], [arXiv:2102.07912 (2021)], [arXiv:2007.01723 (2020)] and [arXiv:2007.08212 (2020)]. In this Comment, it is shown that the parameters derived in a recent arXiv by Kwangrae Kim et. al. [arXiv:2007.08212 (2020)], including the Weiss temperature for excitonic transition, are based on inconsistent data.
The microscopic quantum interference associated with excitonic condensation in Ta$_2$NiSe$_5$ is studied in the BCS-type mean-field approximation. We show that in ultrasonic attenuation the coherence peak appears just below the transition temperature
In the presence of electron-phonon coupling, an excitonic insulator harbors two degenerate ground states described by an Ising-type order parameter. Starting from a microscopic Hamiltonian, we derive the equations of motion for the Ising order parame
We analyze the measured optical conductivity spectra using the density-functional-theory-based electronic structure calculation and density-matrix renormalization group calculation of an effective model. We show that, in contrast to a conventional de
Excitonic insulator (EI) is an intriguing insulating phase of matter, where electrons and holes are bonded into pairs, so called excitons, and form a phase-coherent state via Bose-Einstein Condensation (BEC). Its theoretical concept has been proposed
The three-chain Hubbard model for Ta$_2$NiSe$_5$ known as a candidate material for the excitonic insulator is investigated over the wide range of energy gap $D$ between the two-fold degenerate conduction bands and the nondegenerate valence band inclu