We investigate the effects of two electronic bands at the negative electronic compressibility (NEC) in a two-dimensional electron gas (2DEG). We use a simple homogeneous model with Coulombic interactions and first-order multi-band coupling to examine the role of effective mass and relative permittivity in relation to the critical carrier density, where compressibility turns negative. We demonstrate that the population of a second band, along with the presence of inter-band coupling, can dramatically change the cross-over carrier density. Given the difficulty in determining and confirming multi-band electronic systems, this model provides a potential method for identifying multi-band electronic systems using precise bulk electronic properties measurements. To help illustrate this method, we apply our results to the observed NEC in the 2D electron gas at the interface of LaAlO$_3$/SrTiO$_3$ (LAO/STO) and determine that, for the known parameters of LAO/STO, the system is likely a realization of a two-band 2D electron gas. Furthermore, we provide general limits on the inter-band coupling with respect to the electronic band population.
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