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The conversion of graphene into diamond is a new way for preparing ultrathin diamond film without pressure. Herein, we investigated the transformation mechanism of surface-hydrogenated bilayer graphene (SHBG) into surface-hydrogenated single-layer diamond (SHSLD) crystal, inserting fifteen kinds of single metal atoms without any pressure, by using the systematical first-principles calculations. Compared with the configuration without metal atom, SHBG can be transformed into SHSLD spontaneously in thermodynamics under the action of single metal atom, and its formation energy can even decrease from 0.82 eV to -5.79 eV under the action of Hf atom. According to our results, the outer electron orbits and atomic radius of metal atom are two important factors that affect the conversion. For the phase transition to occur, the metal atom needs to have enough empty d orbitals, and the radius of the metal atom is in the range of 0.136-0.159 nm. Through further analysis, we find that the p orbitals of carbon atoms and d orbital of metal atom in SHBG will be strongly hybridized, thereby promoting the conversion. The results supply important significance to experimentally prepare diamond without pressure through hydrogenated graphene.
Notwithstanding numerous density functional studies on the chemically induced transformation of multilayer graphene into a diamond-like film, a comprehensive convincing experimental proof of such a conversion is still lacking. We show that the fluori
We unveil the diamondization mechanism of few-layer graphene compressed in the presence of water, providing robust evidence for the pressure-induced formation of 2D diamond. High-pressure Raman spectroscopy provides evidence of a phase transition occ
We present a simple torsional potential for graphene to accurately describe its out-of-plane deformations. The parameters of the potential are derived through appropriate fitting with suitable DFT calculations regarding the deformation energy of grap
The capability to control the type and amount of charge carriers in a material and, in the extreme case, the transition from metal to insulator is one of the key challenges of modern electronics. By employing angle resolved photoemission spectroscopy
Metal-insulator transitions (MIT),an intriguing correlated phenomenon induced by the subtle competition of the electrons repulsive Coulomb interaction and kinetic energy, is of great potential use for electronic applications due to the dramatic chang