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Neuromorphic computing with spintronic devices has been of interest due to the limitations of CMOS-driven von Neumann computing. Domain wall-magnetic tunnel junction (DW-MTJ) devices have been shown to be able to intrinsically capture biological neuron behavior. Edgy-relaxed behavior, where a frequently firing neuron experiences a lower action potential threshold, may provide additional artificial neuronal functionality when executing repeated tasks. In this study, we demonstrate that this behavior can be implemented in DW-MTJ artificial neurons via three alternative mechanisms: shape anisotropy, magnetic field, and current-driven soft reset. Using micromagnetics and analytical device modeling to classify the Optdigits handwritten digit dataset, we show that edgy-relaxed behavior improves both classification accuracy and classification rate for ordered datasets while sacrificing little to no accuracy for a randomized dataset. This work establishes methods by which artificial spintronic neurons can be flexibly adapted to datasets.
There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel j
Brain-inspired computing architectures attempt to mimic the computations performed in the neurons and the synapses in the human brain in order to achieve its efficiency in learning and cognitive tasks. In this work, we demonstrate the mapping of the
Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free layer of a ma
It is well established that the spin-orbit interaction in heavy metal/ferromagnet heterostructures leads to a significant interfacial Dzyaloshinskii-Moriya Interaction (DMI) that modifies the internal structure of magnetic domain walls (DWs) to favor
We study the formation and control of metastable states of pairs of domain walls in cylindrical nanowires of small diameter where the transverse walls are the lower energy state. We show that these pairs form bound states under certain conditions, wi